Polymer, resist protective coating material, and patterning process
View Patent ↗In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from an overlay material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the overlay material.
1. A polymer comprising recurring units having the general formula (1) and recurring units (d) derived from (meth)acrylates having pendant perfluoroalkyl groups:
wherein R 1 and R 2 each are hydrogen or methyl, R 3 is a C 1 -C 12 alkylene group when n=1 or a C 1 -C 12 alkylidyne group when n=2, which has a straight, branched or cyclic structure, R 4 is a C 1 -C 12 alkylene group which has a straight, branched or cyclic structure, R 5 is a C 1 -C 12 alkylene group, subscripts a, b 1 and b 2 are numbers in the range: 0<a<1, 0≦b 1 <1, 0≦b 2 <1, 0<b 1 +b 2 <1, 0<a+b 1 +b 2 ≦1.0, and n is equal to 1 or 2, and
said recurring units (d) derived from (meth)acrylates having pendant perfluoroalkyl groups being at least one selected from the group consisting of units having the following formulae:
2. A resist protective coating material comprising the polymer of claim 1 .
3. An immersion lithography process for forming a pattern, comprising the steps of forming a resist layer on a wafer, forming a protective coating on the resist layer from a resist overlay material, and exposing the layer structure to light having a wavelength in the range of 180 to 250 nm through an projection lens while keeping a water-containing liquid between the projection lens and the wafer,
said resist overlay material being the resist protective coating material of claim 2 .
4. The pattern forming process of claim 3 , further comprising, after the exposing step, the steps of post-exposure baking and then developing the layer structure with alkaline water, said developing step serving to develop the resist layer and strip the protective coating of resist overlay material at the same time.
5. A polymer comprising recurring units having the general formula (1′):
wherein R 1 and R 2 each are hydrogen or methyl, R 3 is a C 3 -C 12 alkylene group, which has a cyclic structure, subscripts a and b are numbers in the range: 0<a<1, 0<b1<1, and a+b1=1.0.
6. A resist protective coating material comprising the polymer of claim 5 .
7. An immersion lithography process for forming a pattern, comprising the steps of forming a resist layer on a wafer, forming a protective coating on the resist layer from a resist overlay material, and exposing the layer structure to light having a wavelength in the range of 180 to 250 nm through an projection lens while keeping a water-containing liquid between the projection lens and the wafer,
said resist overlay material being the resist protective coating material of claim 6 .
8. The pattern forming process of claim 7 , further comprising, after the exposing step, the steps of post-exposure baking and then developing the layer structure with alkaline water, said developing step serving to develop the resist layer and strip the protective coating of resist overlay material at the same time.