Nonvolatile semiconductor memory device having capacitor arranged between power supplies to prevent voltage fluctuation
A nonvolatile semiconductor memory device comprises, an internal memory cell array formed in internal area of a surface of semiconductor substrate, a row decoder and a column decoder formed in the internal area to select memory cell of the internal memory cell array, a peripheral circuit formed in the internal area to write and read a selected memory cell in the memory cell array, and external memory cell array formed in external area of the surface of the semiconductor substrate arranged beside the internal memory cell array and electrically separated from the internal memory cell array.
1. A nonvolatile semiconductor memory device comprising:
a memory cell array formed on one side of a rectangular shaped semiconductor substrate;
a row decoder and a column decoder to select a memory cell of the memory cell array;
a peripheral circuit to write and read the selected memory cell; and
conductive pads arranged along with the opposite side of the rectangular shaped semiconductor substrate, wherein
the peripheral circuit comprising,
a capacitor connected to a bias terminal via a capacitor wiring, and
wiring areas and element areas, both said wiring areas and element areas arranged alternatively along with the direction from the memory cell array to the pads.
2. The nonvolatile semiconductor memory device according to claim 1 , wherein
the capacitor is arranged in the wiring area.
3. The nonvolatile semiconductor memory device according to claim 1 , wherein the capacitor is the MIM capacitor.
4. A nonvolatile semiconductor memory device comprising:
a memory cell array formed on one side of a rectangular shaped semiconductor substrate;
a row decoder and a column decoder to select a memory cell of the memory cell array;
a peripheral circuit to write and read the selected memory cell, the peripheral circuit comprising a MIM capacitor connected to a bias terminal via a capacitor wiring;
conductive pads arranged along with the opposite side of the rectangular shaped semiconductor substrate; and
a memory cell of the memory cell array comprising a charge accumulation layer, a word line on the charge accumulation layer and an insulating film therebetween, the thickness of an electrode of the MIM capacitor is the same as the thickness of the charge accumulation layer.
5. The nonvolatile semiconductor memory device according to claim 4 , wherein
the memory cell array comprises a cell string including a plurality of nonvolatile memory cells connected in series.
6. The nonvolatile semiconductor memory device according to claim 1 , wherein the capacitor is the MIM capacitor.
7. The nonvolatile semiconductor memory device according to claim 6 , wherein
the capacitor connected to the bias terminal via a wiring in the wiring area.
8. The nonvolatile semiconductor memory device according to claim 7 , wherein
the capacitor is arranged between the two different bias terminals in the peripheral area and connected to the bias terminals via a wiring respectively.
9. The nonvolatile semiconductor memory device according to claim 8 , wherein a memory cell of the memory cell array comprises a charge accumulation layer, a word line and an insulating film therebetween, a thickness of an electrode of the MIM capacitor is the same as the thickness of the charge accumulation layer.
10. The nonvolatile semiconductor memory device according to claim 4 , wherein
the memory cell array comprises a cell string including a plurality of nonvolatile memory cells connected in series.