Method for manufacturing wiring and method for manufacturing semiconductor device
View Patent ↗The present invention provides a method for manufacturing a wiring and a method for manufacturing a semiconductor device, which do not require a photolithography step in connecting a pattern of an upper layer and a pattern of a lower layer. According to the present invention, a composition including a conductive material is discharged locally and an electric conductor to function as a pillar is formed on a first pattern over a substrate, an insulator is formed to cover the electric conductor, the insulator is etched to expose a top surface of the electric conductor, and a second pattern is formed on the top surface of electric conductor that is exposed.
1. A method for manufacturing a wiring, comprising the steps of:
forming a first pattern over a substrate;
forming a pillar on a portion of the first pattern by ink-jetting a material in which an electric conductor is dissolved or dispersed in a solvent;
forming an insulator to cover the pillar;
etching the insulator to expose at least a top surface of the pillar; and
forming a second pattern on the exposed top surface of the pillar.
2. The method for manufacturing a wiring according to claim 1 , wherein the electric conductor is selected from a group consisting of silver, gold, copper and indium tin oxide.
3. The method for manufacturing a wiring according to claim 1 , wherein the insulator is etched by an etchback method or a CMP method.
4. The method for manufacturing a wiring according to claim 1 , wherein the insulator is formed by ink-jetting a composition including resin.
5. The method for manufacturing a wiring according to claim 1 , wherein at least one of the first and the second patterns are formed by ink-jetting a composition including a conductive material.
6. The method for manufacturing a wiring according to claim 1 , wherein at least one of the first and the second patterns are formed by a photolithography step.
7. The method for manufacturing a semiconductor device including the wiring according to claim 1 , wherein the semiconductor device is used for an electronic apparatus selected from the group consisting of a liquid crystal television, a monitor, a laptop personal computer, a portable terminal, a goggle type display, a portable game machine, and a digital video camera.
8. A method for manufacturing a semiconductor device, comprising the steps of:
forming a pillar on a portion of an impurity region included in a semiconductor film by ink-jetting a material in which an electric conductor is dissolved or dispersed in a solvent;
forming an insulator to cover the pillar;
etching the insulator to expose at least a top surface of the pillar; and
forming a pattern on the exposed top surface of the pillar.
9. The method for manufacturing a semiconductor device according to claim 8 , wherein the electric conductor is selected from a group consisting of silver, gold, copper and indium tin oxide.
10. The method for manufacturing a semiconductor device according to claim 8 , wherein the insulator is etched by an etchback method or a CMP method.
11. The method for manufacturing a semiconductor device according to claim 8 , wherein the insulator is formed by ink-jetting a composition including resin.
12. The method for manufacturing a semiconductor device according to claim 8 , wherein the semiconductor device is used for an electronic apparatus selected from the group consisting of a liquid crystal television, a monitor, a laptop personal computer, a portable terminal, a goggle type display, a portable game machine, and a digital video camera.
13. The method for manufacturing a semiconductor device according to claim 8 , wherein the pattern includes a conductive material.
14. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first semiconductor film including one conductivity type impurity over a first pattern;
forming a second semiconductor film over the first semiconductor film including one conductivity type impurity;
forming a first insulator over the second semiconductor film;
forming a second pattern by ink-jetting over the first insulator;
patterning the first semiconductor film including one conductivity type impurity, the second semiconductor film and the first insulator by using the second pattern as a mask;
removing the second pattern;
forming a pillar on a portion of the first pattern by ink-jetting a material in which an electric conductor is dissolved or dispersed in a solvent;
forming a second insulator to cover the pillar;
etching the second insulator to expose at least a top surface of the pillar; and
forming a third pattern on the exposed top surface of the pillar.
15. The method for manufacturing a semiconductor device according to claim 14 , wherein the electric conductor is selected from a group consisting of silver, gold, copper and indium tin oxide.
16. The method for manufacturing a semiconductor device according to claim 14 , wherein the second insulator is etched by an etchback method or a CMP method.
17. The method for manufacturing a semiconductor device according to claim 14 , wherein the second insulator is formed by ink-jetting a composition including resin.
18. The method for manufacturing a semiconductor device according to claim 14 , wherein the semiconductor device is used for an electronic apparatus selected from the group consisting of a liquid crystal television, a monitor, a laptop personal computer, a portable terminal, a goggle type display, a portable game machine, and a digital video camera.
19. The method for manufacturing a semiconductor device according to claim 14 , wherein the first pattern includes a conductive material.
20. The method for manufacturing a semiconductor device according to claim 14 , wherein the second pattern includes an organic insulator.
21. The method for manufacturing a semiconductor device according to claim 14 , wherein the third pattern includes a conductive material.
22. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first insulator over a semiconductor film;
forming a first pattern over the first insulator;
adding an impurity into the semiconductor film by using the first pattern as a mask;
forming a pillar on a portion of an impurity region included in the semiconductor film by ink-jetting a material in which an electric conductor is dissolved or dispersed in a solvent;
forming a second insulator to cover the pillar;
etching the second insulator to expose at least a top surface of the pillar; and
forming a second pattern on the exposed top surface of the pillar.
23. The method for manufacturing a semiconductor device according to claim 22 , wherein the electric conductor is selected from a group consisting of silver, gold, copper and indium tin oxide.
24. The method for manufacturing a semiconductor device according to claim 22 , wherein the second insulator is etched by an etchback method or a CMP method.
25. The method for manufacturing a semiconductor device according to claim 22 , wherein the second insulator is formed by ink-jetting a composition including resin.
26. The method for manufacturing a semiconductor device according to claim 22 , wherein the semiconductor device is used for an electronic apparatus selected from the group consisting of a liquid crystal television, a monitor, a laptop personal computer, a portable terminal, a goggle type display, a portable game machine, and a digital video camera.
27. The method for manufacturing a semiconductor device according to claim 22 , wherein the first pattern includes a conductive material.
28. The method for manufacturing a semiconductor device according to claim 22 , wherein the second pattern includes a conductive material.