IP Library Granted Patent US 7,362,203
Granted Patent B2
US 7,362,203 · App. 11/137,748 · Granted Apr 22, 2008

Multi-tap microelectromechanical inductor

Assignee: Intel Corporation
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Quick Facts
Patent No.
US 7,362,203
App. No.
11/137,748
Granted
Apr 22, 2008
Kind
B2
Abstract

An apparatus, system, method, and article for a multi-tap microelectromechanical inductor are described. The apparatus may include an inductor formed on a substrate, a switching mechanism contacting the inductor to vary inductance of said inductor; and a disconnect mechanism contacting the inductor to reduce parasitic effects of the inductor upon actuation of said switching mechanism. Other embodiments are described and claimed.

Claims (23)

1. An apparatus, comprising:

an inductor formed on a substrate;

a switching mechanism contacting the inductor to vary inductance of said inductor, said switching mechanism comprising one or more microelectromechanical switch armatures; and

a disconnect mechanism contacting the inductor to reduce parasitic effects of the inductor upon actuation of said switching mechanism.

2. The apparatus of claim 1 , wherein said inductor is formed on a single layer of said substrate.

3. The apparatus of claim 1 , wherein said inductor is formed on multiple layers of said substrate.

4. The apparatus of claim 1 , wherein said microelectromechanical switch armatures comprise one or more cantilever-type switches.

5. The apparatus of claim 1 , wherein said disconnect mechanism comprises one or more microelectromechanical switches.

6. The apparatus of claim 1 comprising a first inductor formed on a first layer of said substrate and a second inductor formed on a second layer of said substrate.

7. A system, comprising:

an antenna;

a microelectromechanical node to couple to said antenna, said microelectromechanical node comprising:

an inductor formed on a substrate;

a switching mechanism contacting the inductor to vary inductance of said inductor; and

a disconnect mechanism contacting the inductor to reduce parasitic effects of the inductor upon actuation of said switching mechanism.

8. The system of claim 7 , wherein said inductor is formed on a single layer of said substrate.

9. The system of claim 7 , wherein said inductor is formed on multiple layers of said substrate.

10. The system of claim 7 , wherein said switching mechanism comprises one or more microelectromechanical switch armatures.

11. The system of claim 10 , wherein said microelectromechanical switch armatures comprise one or more cantilever-type switches.

12. The system of claim 7 , wherein said disconnect mechanism comprises one or more microelectromechanical switches.

13. The system of claim 7 comprising a first inductor formed on a first layer of said substrate and a second inductor formed on a second layer of said substrate.

14. The system of claim 7 , wherein said microelectromechanical node forms part of an impedance matching system including.

15. The system of claim 7 , wherein said microelectromechanical node forms part of a radio frequency identification transceiver.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 14, 2020
From: INTEL CORPORATION
To: APPLE INC.
Reel/Frame 052414/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 24, 2005
From: POSAMENTIER, JOSHUA D.
To: INTEL CORPORATION
Reel/Frame 016606/0031 →
Continuity (1)
Related Publication 20060267717A1 · Nov 30, 2006