Electronic device and method of manufacturing the same
In the present invention, an etching hole 21 is formed in a polysilicon film 14 as a cavity-wall member. Through the etching hole 21 , hydrofluoric acid is injected, so as to dissolve a silicon oxide film 13 , thereby forming a cavity 22 . In the cavity 22 , a detecting unit 12 of a sensor is in an exposed condition. Next, by sputtering, an Al film 16 is deposited in the etching hole 21 and on an upper face of a substrate. Thereafter, a portion of the Al film 16 positioned on the polysilicon film 14 is removed by etching back, thereby leaving only a metal closure 16 a of Al which closes the etching hole. The sputtering step is performed under a pressure of 5 Pa or less, so that the pressure in the cavity can be held to be low.
1. A method of fabricating an electronic device comprising the steps of:
(a) preparing a substrate on which part of the electronic device is disposed, and forming a sacrificial layer which covers the part of the electronic device on a selected region of the substrate;
(b) forming a cavity-wall film which covers the sacrificial layer on the substrate;
(c) forming at least one opening which runs through the cavity-wall film and reaches the sacrificial layer in the cavity-wall film;
(d) selectively etching at least part of the sacrificial layer via the opening, thereby forming a cavity surrounding the part of the electronic device; and
(e) forming a sealing member for closing the opening by sputtering,
wherein the part of the electronic device is a detecting unit of an infrared sensor,
in the step (a), the sacrificial layer is formed from a polysilicon film, and
in the step (b), a polysilicon film and a silicon oxide film enwrapping the polysilicon film are formed as the cavity-wall film.
2. A method of fabricating an electronic device comprising the steps of:
(a) preparing a substrate on which part of the electronic device is disposed, and forming a sacrificial layer which covers the part of the electronic device on a selected region of the substrate;
(b) forming a cavity-wall film which covers the sacrificial layer on the substrate;
(c) forming at least one opening which runs though the cavity-wall film and reaches the sacrificial layer in the cavity-wall film;
(d) selectively etching at least part of the sacrificial layer via the opening, thereby forming a cavity surrounding the part of the electronic device; and
(e) forming a sealing member for closing the opening by sputtering,
further comprising the step of, after the step (d) and before the step (e), depositing a film on an exposed surface of the cavity-wall film by CVD, thereby making the opening smaller.
3. An electronic device comprising:
a substrate;
part of the electronic device disposed on the substrate;
a cavity-wall member surrounding the part of the electronic device with a cavity interposed therebetween; and
a sealing member for closing an opening disposed in a ceiling portion of the cavity-wall member, wherein
the sealing member is formed by sputtering,
the part of the electronic device is a detecting unit of an infrared sensor, and
the cavity-wall member is constituted by polysilicon and a silicon oxide film enwrapping the polysilicon.
4. The electronic device of claim 3 , wherein the part of the electronic device is a detecting unit of an infrared sensor, and
the side and the bottom side of the detecting unit are surrounded by a lower cavity.
5. The electronic device of claim 3 , wherein the opening does not overlap the part of the electronic device as seen from the direction of sputtering.