IP Library › Granted Patent US 7,364,939
Granted Patent B2
US 7,364,939 · App. 11/071,312 · Granted Apr 29, 2008

Active matrix display device

Assignee: Seiko Epson Corporation
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Quick Facts
Patent No.
US 7,364,939
App. No.
11/071,312
Granted
Apr 29, 2008
Kind
B2
Abstract

In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer.

Claims (9)

1. A method of manufacturing an organic semiconductive film, the method comprising the steps of:

forming a plurality of insulating layers that surround a region, the plurality of insulating layers comprising a first insulating layer and a second insulating layer and the second insulating layer has water-repellent properties;

applying a liquid solution in the region, the liquid solution comprising a precursor of the organic semiconductive film and solvent, and being hydrophilic;

forming an organic semiconductive film by removing the solvent so as to be in contact with the insulating film.

2. The method of manufacturing an organic semiconductive film according to claim 1 , the semiconductive film being formed by ink-jet process.

3. The method of manufacturing an organic semiconductive film according to claim 1 , the first insulating layer formed of an inorganic material and the second insulating layer formed of an organic material.

4. The method of manufacturing an organic semiconductive film according to claim 3 , the second insulating layer being deposited on the first insulating layer.

5. The method of manufacturing an organic semiconductive film according to claim 1 , the second insulating layer has a width narrower than a width of the first insulating layer.

6. The method of manufacturing an organic semiconductive film according to claim 1 , the region bounded by the insulating film having a rounded shape.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 30, 2013
From: SEIKO EPSON CORPORATION
To: INTELLECTUAL KEYSTONE TECHNOLOGY LLC
Reel/Frame 030321/0101 →
Priority Claims (1)
JP 9-225434 · Aug 21, 1997 · national
Continuity (4)
Division 1061699100 · Jul 11, 2003
Division 1010287800 · Mar 22, 2002
Division 0928480200
Related Publication 20050170096A1 · Aug 4, 2005