Method for silicon nitride chemical vapor deposition
Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR 2 —Si(R′ 2 )—Si(R′ 2 )—NR 2 (amino(di)silanes), R 3 —Si—N═N═N (silyl azides), R′ 3 —Si—NR—NR 2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R′ comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.
1. A method for depositing a SiN-containing layer on a substrate, the method comprising:
heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius;
flowing a silicon-containing gas into the processing chamber, wherein the silicon-containing gas is 1,3,4,5,7,8-hexamethytetrasiliazane;
flowing a nitrogen-containing gas into the processing chamber; and
depositing a SiN-containing layer on a substrate.
2. The method of claim 1 , wherein the processing chamber is maintain between about 10 Torr to about 350 Torr.
3. The method of claim 1 , wherein the nitrogen-containing gas is at least one of NH 3 , N 2 H 4 or HN 3 .
4. The method of claim 1 , wherein the nitrogen-containing gas is NH 3 provided at a ratio of NH 3 to silicon-containing gas in the range of about 1:100 to about 100:1.
5. The method of claim 1 , wherein the nitrogen-containing gas is NH 3 provided at a ratio of NH 3 to silicon-containing gas in the range of about 5:1 to about 1:1.
6. The method of claim 1 , wherein the substrate is maintained at a temperature less than about 500 degrees Celsius.
7. The method of claim 1 , wherein the nitrogen-containing gas is NH 3 provided at a ratio of NH 3 to silicon-containing gas in the range of about 50:1 to about 100:1.
8. The method of claim 6 , wherein the nitrogen-containing gas is NH 3 provided at a ratio of NH 3 to silicon-containing gas in the range of about 5:1 to about 1:1.
9. The method of claim 1 , wherein the step of heating the substrate further comprises:
heating the substrate to a temperature between about 400 to about 500 degrees Celsius.
10. The method of claim 1 further comprising:
flowing an oxygen precursor into the processing chamber.
11. The method of claim 10 , wherein the oxygen precursor is at least one of atomic-oxygen, oxygen (O 2 ), ozone (O 3 ), H 2 O, H 2 O 2 , organic peroxides, alcohols, N 2 O, NO, NO 2 , N 2 O 5 and derivatives thereof.