Methods for post-etch deposition of a dielectric film
Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the etch reactor, and forming a protection layer on the etched low-k dielectric layer. In another embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor, etching the low-k dielectric layer in the reactor, bonding the etched low-k dielectric layer with a polymer gas supplied into the reactor, forming a protection layer on the etched low-k dielectric layer, and removing the protection layer formed on the etched low-k dielectric layer.
1. A method for post-etch deposition on a dielectric film, comprising:
(a) providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor;
(b) etching the low-k dielectric layer through a photoresist mask to form features in the etch reactor;
(c) removing the photoresist mask after etching in the presence of an oxygen containing plasma; and
(d) depositing a protection layer on the surfaces of the features formed in the etched low-k dielectric layer, wherein the protection layer decreases the dielectric constant of the etched dielectric layer.
2. The method of claim 1 , wherein depositing a protection layer further comprises:
flowing at least a carrier gas into the etch reactor, wherein the carrier gas includes at least one of argon gas (Ar), oxygen (O 2 ), helium (He), nitric oxide (NO), carbon monoxide (GO), nitrous oxide (N 2 O), or nitrogen gas (N 2 ).
3. The method of claim 1 , wherein depositing a protection layer further comprising:
flowing at least one polymer gas into the etch reactor after feature etching is complete, wherein the polymer gas is a carbon and silicon containing gas.
4. The method of claim 3 , wherein the polymer gas has a hydrophobic functional group.
5. The method of claim 1 , wherein depositing a protection layer further comprises:
controlling process pressure in the reactor between about 10 to about 500 mTorr, and
maintaining the substrate at a temperature between about 0 and about 100 degrees Celsius.
6. The method of claim 1 , wherein depositing a protection layer further comprises:
modifying a surface of the etched dielectric layer from hydrophilic to hydrophobic state.
7. The method of claim 3 , wherein the polymer gas is selected from a group includes at least one of fluoroalkyl polyoxyethene, polydimethylsioxane, trimethylsilane, octamethylcyclotetrasilane, hexamethyldisiliane, or tetramethylsilane.
8. The method of claim 1 further comprising:
in-situ depositing the protection layer in the reactor; and
subsequently removing the substrate from the reactor.
9. The method of claim 1 further comprising:
removing the protection layer formed on the etched low-k dielectric layer.
10. The method of claim 9 , wherein removing the protection layer further comprising:
flowing a non-hydrogen containing gas into the etch reactor.
11. The method of claim 10 , wherein the non-hydrogen containing gas includes at least one of tetrafluoromethane gas (CF 4 ) and nitrogen trifluoride gas (NF 3 ).
12. The method of claim 9 further comprising:
in-situ removing the protection layer in the reactor; and
subsequently removing the substrate from the reactor.
13. The method of claim 9 , wherein removing the protection layer further comprises:
controlling process pressure in the reactor between about 4 to about 350 mTorr, and
maintaining the substrate at a temperature between about 0 to about 40 degrees Celsius.
14. The method of claim 10 , wherein flowing the non-hydrogen containing gas further comprises:
flowing the non-hydrogen containing gas between about 1 to 100 sccm.
15. A method for post-etch deposition on a dielectric film, comprising:
(a) providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor;
(b) etching the low-k dielectric layer to form features in the reactor;
(c) removing the photoresist mask after etching in the presence of an oxygen containing plasma;
(d) bonding the surface of the features formed in the etched low-k dielectric layer with a polymer gas supplied into the reactor;
(e) depositing a protection layer on the etched low-k dielectric layer, the protection layer decreasing the dielectric constant of the low-k dielectric layer; and
(f) removing the protection layer formed on the etched low-k dielectric layer.
16. The method of claim 15 , wherein the polymer gas is a carbon and silicon containing gas.
17. The method of claim 15 , wherein the polymer gas has a hydrophobic functional group.
18. The method of claim 15 , wherein depositing a protection layer further comprises:
altering the surface property of the etched dielectric layer by the protection layer formed thereon.
19. The method of claim 15 , wherein bonding the etched low-k dielectric layer further comprises:
modifying the surface of the etched dielectric layer from hydrophilic to hydrophobic state.
20. The method of claim 15 , wherein the polymer gas includes at least one of fluoroalkyl polyoxyethene, polydimethylsioxane, trimethylsilane, octamethylcyclotetrasilane, hexamethyldisiliane, or tetramethylsilane.
21. The method of claim 15 further comprises:
in-situ depositing the protection layer in the reactor;
in-situ removing the protection layer in the reactor; and
subsequently removing the substrate from the etch reactor.
22. The method of claim 15 , wherein removing the protection layer further comprises:
flowing a non-hydrogen containing gas into the etch reactor.
23. The method of claim 22 , wherein the non-hydrogen containing gas includes at least one of tetrafluoromethane gas (CF 4 ) and nitrogen trifluoride gas (NF 3 ).
24. The method of claim 15 further comprising:
in-situ removing the protection layer in the reactor; and
subsequently removing the substrate from the reactor.
25. A method for post-etch deposition on a dielectric film, comprising:
(a) providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor;
(b) etching the low-k dielectric layer through a mask to form features in the reactor;
(c) providing a polymer gas into the reactor after the mask has been removed using an oxygen containing plasma;
(d) depositing a protection layer using the polymer gas on the etched low-k dielectric layer, wherein the protection layer decreases the dielectric constant of the etched low-k dielectric layer;
(e) removing the protection layer formed on the etched low-k dielectric layer;
and
(f) removing the substrate from the etch reactor.
26. The method of claim 25 , wherein depositing a protection layer further comprises:
ex-situ depositing the protection layer in a second etch reactor.
27. The method of claim 25 , wherein removing the protection layer further comprises:
ex-situ removing the protection layer in a third etch reactor.