Surface-emitting type semiconductor laser
A surface-emitting type semiconductor laser includes: a first mirror; an active layer formed above the first mirror; a second mirror formed above the active layer; and a current constricting section formed above or below the active layer, wherein the second mirror has a plurality of concave sections arranged within a plane perpendicular to a light emission direction, and a light confining region surrounded by the concave sections is formed inside a region surrounded by the current constricting section as viewed in a plan view.
1. A surface-emitting type semiconductor laser comprising:
a first mirror;
an active layer formed above the first mirror;
a second mirror formed above the active layer;
a current constricting section formed above or below the active layer,
the second mirror having a plurality of concave sections arranged within a plane perpendicular to a light emission direction;
a depth of each of the plurality of concave sections being smaller than the thickness of the second mirror;
a light confining region surrounded by the concave sections being formed inside a region surrounded by the current constricting section as viewed in a plan view; and
a dielectric mirror formed above the second mirror, a lowermost layer of the dielectric mirror being embedded in the concave sections.
2. A surface-emitting type semiconductor laser comprising:
a first mirror;
an active layer formed above the first mirror;
a second mirror formed above the active layer;
a current constricting section formed above or below the active layer,
the second mirror having a plurality of concave sections arranged within a plane perpendicular to a light emission direction;
a light confining region surrounded by the concave sections being formed inside a region surrounded by the current constricting section as viewed in a plan view; and
a first columnar section formed from at least the active layer, the second mirror and the current constricting section,
the first columnar section including a third columnar section having the active layer and the current constricting section and a second columnar section formed above the third columnar section, and an electrode formed on a top surface of the third columnar section and around the second columnar section.
3. A surface-emitting type semiconductor laser comprising:
a first mirror;
an active layer formed above the first mirror;
a second mirror formed above the active layer;
a current constricting section formed above or below the active layer,
the second mirror having a plurality of concave sections arranged within a plane perpendicular to a light emission direction;
a light confining region surrounded by the concave sections being formed inside a region surrounded by the current constricting section as viewed in a plan view; and
a heat radiation film formed above the second mirror.
4. A surface-emitting type semiconductor laser according to claim 3 , the heat radiation film having optical transparency.
5. A surface-emitting type semiconductor laser according to claim 3 , the heat radiation film being composed of a conductive material, and further comprising an insulation layer having optical transparency provided between the second mirror and the heat radiation film.
6. A surface-emitting type semiconductor laser according to claim 5 , the insulation film being embedded inside the concave sections.
7. A surface-emitting type semiconductor laser comprising:
a first mirror;
an active layer formed above the first mirror;
a second mirror formed above the active layer;
a current constricting section formed above or below the active layer,
the second mirror having a plurality of concave sections arranged within a plane perpendicular to a light emission direction;
a light confining region surrounded by the concave sections being formed inside a region surrounded by the current constricting section as viewed in a plan view;
a conductive film formed on an entire surface above the second mirror;
a first heat radiation film formed above the conductive film; and
a second heat radiation film formed above the first heat radiation film,
the conductive film functioning as an electrode for driving the surface-emitting type semiconductor laser, and the second heat radiation film being composed of a conductive material and being electrically connected to the conductive film.
8. A surface-emitting type semiconductor laser according to claim 1 , the second mirror including a dielectric mirror.