Solid state device and light-emitting element
A solid-state device having: a flip-chip mounted solid-state element; a power receiving/feeding portion having a mounting substrate to allow that a mounting surface of the solid-state element forms substantially the same plane as a surface of the mounting substrate; and an inorganic sealing portion made of an inorganic sealing material having a thermal expansion coefficient equal to that of the power receiving/feeding portion for sealing the solid-state element.
1. A solid-state device, comprising:
a flip-chip mounted solid-state element;
a power receiving/feeding portion comprising a mounting substrate to allow that a mounting surface of the solid-state element forms substantially the same plane as a surface of the mounting substrate; and
an inorganic sealing portion comprising an inorganic sealing material having a thermal expansion coefficient equal to that of the power receiving/feeding portion for sealing the solid-state element.
2. The solid-state device according to claim 1 , wherein the mounting substrate comprises:
an inorganic substrate; and
a conductive pattern formed thereon.
3. The solid-state device according to claim 1 , wherein the mounting substrate comprises:
an inorganic substrate; and
a circuit pattern comprising:
a first conductive pattern formed on the solid-state element mounting side;
a second conductive pattern formed on the backside thereof; and
a third conductive pattern for electrically connecting both the sides.
4. The solid-state device according to claim 3 , wherein:
the mounting substrate seals the solid-state element while being bonded to the inorganic sealing portion by chemical reaction.
5. The solid-state device according to claim 1 , wherein:
the inorganic sealing portion is formed by pressure-bonding a low melting point glass as the inorganic sealing material to the mounting substrate in a high-viscosity condition of 10 4 -10 9 poises.
6. The solid-state device according to claim 1 , wherein:
the solid-state element comprises an electrode comprising a light reflectivity on the mounting surface side.
7. The solid-state device according to claim 1 , wherein:
the solid-state element is mounted on the power receiving/feeding portion through a conductive adhesive.
8. The solid-state device according to claim 1 , wherein:
the solid-state element is mounted on the power receiving/feeding portion through an eutectic material.
9. The solid-state device according to claim 1 , wherein:
the solid-state element is mounted on the mounting substrate by fusion-bonding an electrode with the mounting surface to a circuit pattern formed on the mounting substrate.
10. The solid-state device according to claim 1 , wherein:
the inorganic sealing portion comprises a thermal expansion coefficient equal to or up to 4 times that of the solid-state element.
11. The solid-state device according to claim 1 , wherein the solid-state element comprises an optical element, and
wherein the inorganic sealing material comprises a light-transmitting material.
12. The solid-state device according to claim 11 , wherein:
the optical element comprises a light-emitting element.
13. The solid-state device according to claim 12 , wherein:
the light-emitting element comprises an optical catalytic portion formed on a surface of the inorganic sealing portion.
14. The solid-state device according to claim 13 , wherein the optical catalytic portion comprises a light-transmitting protective layer for protecting the surface of the inorganic sealing portion, and
wherein the surface of the protective layer comprises an optical catalytic layer comprised of TiO 2 .
15. The solid-state device according to claim 12 , wherein the light-emitting element comprises a GaN-based light-emitting element,
wherein the GaN-based light-emitting element comprises:
a sapphire substrate; and
a GaN-based semiconductor layer formed on the sapphire substrate.
16. The solid-state device according to claim 11 , wherein:
the optical element comprises a light-receiving element.
17. The solid-state device according to claim 2 , wherein:
the solid-state element is mounted on the mounting substrate to prevent the penetration of the inorganic sealing material between the solid-state element and the conductive pattern.
18. The solid state device according to claim 2 , wherein the conductive pattern comprises one of tungsten, nickel, and gold.
19. The solid state device according to claim 2 , wherein joined surfaces of a p-electrode and an n-electrode of the solid-state element are electrically connected to the conductive pattern on substantially the same plane.
20. A method of manufacturing a solid state device, comprising:
forming a circuit pattern layout on a surface of a mounting substrate having via holes;
forming the circuit pattern layout on the mounting substrate;
plating the circuit pattern layout to form a circuit pattern;
forming a conductive adhesive on a surface of the circuit pattern;
forming a solid-state element on the circuit pattern such that a mounting surface of a p-electrode and n-electrode of the solid state element are on substantially the same plane relative to the surface of the circuit pattern; and
forming an inorganic sealing portion by pressure-bonding a low melting point glass to the mounting substrate in a high-viscosity condition of 10 4 -10 9 poises.