Thermal-type infrared detection element
An infrared absorption film (first through third infrared absorption films) that constitutes a photoreceptor of a thermal-type infrared detection element comprises a laminate film in which a film composed of a novel SiCO material having high absorption on the short-wavelength end (approximately 8 to 10 μm) of the waveband (atmospheric window) from 8 to 14 μm is combined with a film composed of SiO, SiN, SiC, SiON, SiCN, or another material having high absorption on the long-wavelength end (approximately 10 to 14 μm) of the abovementioned waveband. Infrared rays on the short-wavelength end that could not be effectively utilized by the conventional thermal infrared detection element can thereby be absorbed by the SiCO membrane, infrared rays throughout the abovementioned waveband can be effectively utilized, and the sensitivity of the thermal infrared detection element can be enhanced.
1. A thermal-type infrared detection element comprising:
a substrate;
a photoreceptor provided with a heat-sensitive resistor and an infrared absorption film; and
a beam having one end fixed to said substrate, for holding said photoreceptor in midair in a state of separation from said substrate,
wherein said infrared absorption film comprises a plurality of types of films, and said plurality of types of films includes a film composed of SiCO, and
wherein said film composed of SiCO has a maximum absorption rate with respect to infrared rays in the waveband of approximately 9 to 10 μm.
2. The thermal-type infrared detection element according to claim 1 , wherein said film composed of SiCO is formed in a layer other than the outermost layer.
3. The thermal-type infrared detection element according to claim 1 , wherein some films among said plurality of types of films are formed only in said photoreceptor, and other films are formed continuously with both said photoreceptor and said beam.
4. A thermal-type infrared detection element comprising:
a substrate;
a photoreceptor provided with a heat-sensitive resistor and an infrared absorption film; and
a beam having one end fixed to said substrate, for holding said photoreceptor in midair in a state of separation from said substrate,
wherein said infrared absorption film comprises a plurality of types of films, and said plurality of types of films includes a film composed of SiCO, and a film composed of at least one type of material selected from the group consisting of SiO, SiN, SiC, SiON and SiCN, and
wherein said film composed of SiCO has a maximum absorption rate with respect to infrared rays in the waveband of approximately 9 to 10 μm.
5. The thermal-type infrared detection element according to claim 4 , wherein said film composed of SiCO is formed in a layer other than the outermost layer.
6. The thermal-type infrared detection element according to claim 4 , wherein some films among said plurality of types of films are formed only in said photoreceptor, and other films are formed continuously with both said photoreceptor and said beam.
7. A thermal-type infrared detection element comprising:
a substrate;
a photoreceptor provided with a heat-sensitive resistor and an infrared absorption film; and
a beam that includes a wiring having one end connected to said heat-sensitive resistor and another end connected to a circuit formed in a substrate, for holding said photoreceptor in midair in a state of separation from said substrate,
wherein said infrared absorption film comprises a plurality of types of films that include:
a first infrared absorption film formed in a bottom layer of said heat-sensitive resistor;
a second infrared absorption film formed in a top layer of said heat-sensitive resistor; and
a third infrared absorption film formed in a top layer of said wiring connected to said heat-sensitive resistor via a through-hole provided to said second infrared absorption film,
wherein said plurality of types of films comprising:
a film composed of SiCO material; and
a film composed of any of the materials selected from the group consisting of SiO, SiN, SiC, SiON, and SiCN, and
wherein said film composed of SiCO has a maximum absorption rate with respect to infrared rays in the waveband of approximately 9 to 10 μm.
8. The thermal-type infrared detection element according to claim 7 , wherein said film composed of SiCO is formed in a layer other than the outermost layer.
9. The thermal-type infrared detection element according to claim 7 , wherein some films among said plurality of types of films are formed only in said photoreceptor, and other films are formed continuously with both said photoreceptor and said beam.