IP Library Granted Patent US 7,417,305
Granted Patent B2
US 7,417,305 · App. 10/928,666 · Granted Aug 26, 2008

Electronic devices at the wafer level having front side and edge protection material and systems including the devices

Assignee: Micron Technology, Inc.
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Quick Facts
Patent No.
US 7,417,305
App. No.
10/928,666
Granted
Aug 26, 2008
Kind
B2
Abstract

Methods for applying a dielectric protective layer to a wafer in wafer-level chip scale package manufacture are disclosed. A flowable dielectric protective material with fluxing capability is applied over the active surface of an unbumped semiconductor wafer to cover active device areas, bond pads, test socket contact locations, and optional pre-scribed wafer street trenches. Preformed solder balls are then disposed over the bond pads, and the wafer is subjected to a heating process to reflow the solder balls and at least partially cure the dielectric protective material. During the heating process, the dielectric protective material provides a fluxing capability to enable the solder balls to wet the bond pads. In other exemplary embodiments, the dielectric protective material is applied over only intended physical contact locations and/or pre-scribed wafer street trenches, in which case the dielectric protective material need not include flux material and may additionally include a filler material.

Claims (26)

1. An electronic system, comprising:

at least one electronic device comprising a microprocessor; and

at least another electronic device comprising a memory operably coupled to the microprocessor:

at least one of the electronic devices comprising an active surface bearing an at least partially cured dielectric protective material at least partially disposed over and terminating adjacent at least one location thereon configured for contact with an external structure during at least one of handling, processing and testing thereof.

2. The electronic system of claim 1 , wherein the at least one location is a peripheral location.

3. The electronic system of claim 2 , where in the peripheral location extends along an entire periphery of the at least one electronic device.

4. An electronic device having an active surface, comprising:

at least one location on the electronic device configured for contact with a test socket during at least one of handling, processing and testing of the electronic device;

an at least partially cured dielectric protective material at least partially disposed over the at least one location; and

at least one solder ball at least partially extending through the at least partially cured dielectric protective material and disposed adjoining an external contact location on the active surface.

5. The electronic device of claim 4 , wherein the external contact location further comprises at least one underbump metallurgy structure.

6. The electronic device of claim 4 , wherein the at least one location is a peripheral location.

7. The electronic device of claim 6 , wherein the peripheral location extends along an entire periphery of the electronic device.

8. The electronic device of claim 4 , wherein the at least partially cured dielectric protective material further comprises at least a flux material.

9. A substrate bearing, a plurality of electronic device locations on an active surface thereof, comprising an at least partially cured dielectric protective material comprising a flux material disposed over and terminating adjacent at least one peripheral location on each electronic device location configured for contact with an external structure during at least one of handling, processing and testing of a discrete electronic device formed therefrom.

10. The substrate of claim 9 , wherein the at least one peripheral location extends along an entire periphery of each electronic device location of the plurality.

11. The substrate of claim 9 , wherein the at least one peripheral location is at least one pre-scribed trench.

12. An electronic device having an active surface, comprising an at least partially cured dielectric protective material comprising at least a flux material at least partially disposed over at least one location thereon configured for contact with a connection terminal of a test socket.

13. The electronic device of claim 12 , wherein the at least one location is a peripheral location.

14. The electronic device of claim 13 , wherein the peripheral location extends alone an entire periphery of the electronic device.

15. An electronic system, comprising:

at least one electronic device comprising a microprocessor; and

at least another electronic device comprising a memory operably coupled to the microprocessor;

at least one of the electronic devices comprising an active surface bearing an at least partially cured dielectric protective material comprising at least a flux material at least partially disposed over at least one location thereon configured for contact with a connection terminal of a test socket.

16. The electronic system of claim 15 , wherein the at least one location is a peripheral location.

17. The electronic system of claim 16 , wherein the peripheral location extends along an entire periphery of the at least one electronic device.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 26, 2004
From: JIANG, TONGBI; LUO, SHIJIAN
To: MICRON TECHONOLOGY, INC.
Reel/Frame 015746/0483 →
Continuity (1)
Related Publication 20060043364A1 · Mar 2, 2006