Electronic device including a guest material within a layer and a process for forming the same

1. An electronic device comprising:

a substrate;

a continuous first layer comprising a host material overlying the substrate, wherein:

the continuous layer comprises a first portion in which an electronic component lies and a second portion where no electronic component lies;

the first portion includes a first guest material;

the first guest material is intermixed with the first host material to form intermixed regions in the first portion of the first continuous layer; and

each intermixed region is thicker than the second portion of the continuous layer where no intermixed regions are formed; wherein

the continuous first layer is (1) capable of emitting radiation having an emission maximum at a targeted wavelength or within a targeted spectrum of wavelengths or (2) designed to respond to radiation at a targeted wavelength or within a targeted spectrum of wavelengths, wherein the targeted spectrum has a width no greater than 150 nm; and

the first guest material is (1) capable of emitting radiation having an emission maximum at a targeted wavelength or a targeted spectrum of wavelengths or (2) designed to respond to radiation at a targeted wavelength or within a targeted spectrum of wavelengths; wherein

each of the continuous first layer and the first guest material has an emission maximum within a blue light spectrum, wherein:

the continuous first layer includes additional first portions;

the electronic device includes first electronic components;

each of the first electronic components comprises a first electrode, a second electrode, and at least one of the first portions lying between the first and second electrodes; and wherein:

the continuous first layer includes third portions and fourth portions;

the third portions include a second guest material;

the fourth portions include a third guest material;

the electronic device includes second electronic components and third electronic components;

each of the second electronic components comprises a third electrode, a fourth electrode, and at least one of the second portions lying between the third and fourth electrodes;

each of the third electronic components comprises a fifth electrode, a sixth electrode, and at least one of the third portions lying between the fifth and sixth electrodes;

the second guest material is intermixed with the host material in the third portions of the continuous first layer to form second intermixed regions;

the third guest material is intermixed with the host material in the fourth portions of the continuous first layer to form third intermixed regions;

each intermixed region has a thickness greater than that of the second portion of the continuous layer where no intermixed regions are formed.

2. An electronic device of claim 1 , wherein the first electronic component is a radiation-emitting electronic component or a radiation-responsive electronic component.

3. An electronic device of claim 1 , wherein:

the second guest material is (1) capable of emitting radiation having an emission maximum at a targeted wavelength or a targeted spectrum of wavelengths or (2) designed to respond to radiation at a targeted wavelength or within a targeted spectrum of wavelengths;

the third guest material is (1) capable of emitting radiation having an emission maximum at a targeted wavelength or a targeted spectrum of wavelengths or (2) designed to respond to radiation at a targeted wavelength or within a targeted spectrum of wavelengths; and

wherein the targeted wavelength and the targeted spectrum of wavelengths of the second guest material and the third guest material are different, and those of each is different from those of the first guest material.

4. An electronic device of claim 1 , further comprising a second layer between the substrate and the continuous first layer.