Composition and method for treating a semiconductor substrate
View Patent ↗The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is stable and provokes less or no metal precipitation on the semiconductor surface.
1. A semiconductor cleaning solution composition comprising an alkaline compound, hydrogen peroxide, and a complexing compound having a chemical formula as depicted Formula I:
wherein X is NO 2 ; wherein R 1 , R 2 , and R 3 are independently selected from the group consisting of a hydrocarbyl group and hydrogen, wherein the semiconductor cleaning solution composition is stable and does not provoke aluminum precipitation on a semiconductor surface, and wherein the semiconductor cleaning solution composition comprises from about 0.001 weight % to about 1 weight % of the complexing compound.
2. The composition of claim 1 , wherein the composition is in the form of an aqueous composition.
3. The composition of claim 1 , wherein R 1 , R 2 , and R 3 are hydrogen.
4. The composition of claim 1 , wherein the hydrocarbyl group is an alkyl chain.
5. The composition of claim 1 , wherein the hydrocarbyl group is selected from the group consisting of methyl, ethyl, propyl, isopropyl, and butyl.
6. The composition of claim 1 , wherein the complexing compound has a chemical formula as represented in Formula II:
7. The composition of claim 1 , wherein the alkaline compound comprises an inorganic basic compound or an organic basic compound.
8. The composition of claim 1 , wherein the alkaline compound is selected from the group consisting of ammonia and organic amine.
9. The composition of claim 8 , wherein the organic amine is selected from the group consisting of choline(hydroxyltrialkylammoniumhydroxide), guanidine compounds, alkanolamine, and tetraalkylammoniumhydroxide.
10. The composition of claim 1 , wherein the composition further comprises an oxidizing anion.
11. The composition of claim 1 , wherein the semiconductor cleaning solution composition comprises from about 0.001 weight % to about 0.01 weight % of the complexing compound.
12. The composition of claim 1 , wherein the alkaline compound is ammonia.
13. The composition of claim 4 , wherein the alkaline compound is ammonium hydroxide.
14. The composition of claim 13 , wherein a volume mixing ratio of NH 4 OH (29%) to H 2 O 2 (30%) to H 2 O is 0.25:1:5.
15. The composition of claim 1 , comprising from about 0.1 weight % to about 20 weight % of the alkaline compound and from about 0.1 to about 20 weight percent hydrogen peroxide.
16. The composition of claim 1 , comprising from about 0.1 weight % to about 5 weight % of the alkaline compound and from about 0.1 to about 5 weight % hydrogen peroxide.