Light emitting apparatus and method for manufacturing the same
View Patent ↗The purpose of the invention is to improve reliability of a light emitting apparatus comprising a TFT and organic light emitting elements.
1. A light emitting device comprising:
a transistor over an insulating surface comprising:
a semiconductor layer comprising a channel forming region, a source region and a drain region;
a gate insulation film; and
a gate electrode;
a first insulating layer over the transistor;
a second insulating layer over the first insulating layer;
a third insulating layer over the second insulating layer;
a cathode over the first insulating layer and electrically connected to one of the source region and the drain region;
a light-emitting layer over the cathode;
an anode over the third insulating layer and the light-emitting layer;
a seal pattern over the second insulating layer; and
a sealing plate over the anode and the seal pattern,
wherein the seal pattern is separated from the anode, and
wherein the seal pattern does not overlap the light-emitting layer.
2. A light emitting device according to claim 1 , wherein the first insulating layer comprises an organic material.
3. A light emitting device according to claim 1 , wherein the first insulating layer comprises an inorganic material.
4. A light emitting device according to claim 3 , wherein the first insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.
5. A light emitting device according to claim 1 , wherein the second insulating layer comprises an organic material.
6. A light emitting device according to claim 1 , wherein the third insulating layer comprises an inorganic material.
7. A light emitting device according to claim 6 , wherein the third insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.
8. A light emitting device according to claim 1 , wherein the light-emitting layer comprises an organic material.
9. A light emitting device according to claim 1 , further comprising a driving circuit around a pixel region, wherein the transistor is formed in the pixel region.
10. A light emitting device according to claim 9 , wherein the seal pattern is overlapped with the driving circuit.
11. A light emitting device according to claim 1 , wherein the seal pattern is located over the second insulating layer.
12. A light emitting device comprising:
a transistor over an insulating surface comprising:
a semiconductor layer comprising a channel forming region, a source region and a drain region;
a gate insulation film; and
a gate electrode;
a first insulating layer over the transistor;
a second insulating layer over the first insulating layer;
a third insulating layer over the second insulating layer;
a cathode over the first insulating layer and electrically connected to one of the source region and the drain region;
a light-emitting layer over the cathode;
an anode over the third insulating layer and the light-emitting layer;
a seal pattern in contact with the third insulating layer; and
a sealing plate over the anode and the seal pattern,
wherein the seal pattern is separated from the anode, and
wherein the seal pattern does not overlap the light-emitting layer.
13. A light emitting device according to claim 12 , wherein the first insulating layer comprises an organic material.
14. A light emitting device according to claim 12 , wherein the first insulating layer comprises an inorganic material.
15. A light emitting device according to claim 14 , wherein the first insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.
16. A light emitting device according to claim 12 , wherein the second insulating layer comprises an organic material.
17. A light emitting device according to claim 12 , wherein the third insulating layer comprises an inorganic material.
18. A light emitting device according to claim 17 , wherein the third insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.
19. A light emitting device according to claim 12 , wherein the light:emitting layer comprises an organic material.
20. A light emitting device according to claim 12 , further comprising a driving circuit around a pixel region, wherein the transistor is formed in the pixel region.
21. A light emitting device according to claim 20 , wherein the seal pattern is overlapped with the driving circuit.
22. A light emitting device comprising:
a transistor over an insulating surface comprising:
a semiconductor layer comprising a channel forming region, a source region and a drain region;
a gate insulation film; and
a gate electrode;
a first organic insulating layer over the transistor;
a first inorganic insulating layer over the first organic insulating layer;
a second organic insulating layer over the first inorganic insulating layer;
a second inorganic insulating layer over the second organic insulating layer;
a cathode over the first inorganic insulating layer and electrically connected to one of the source region and the drain region;
a light-emitting layer over the cathode;
an anode over the second inorganic insulating layer and the light-emitting layer;
a seal pattern over the insulating surface; and
a sealing plate over the anode and the seal pattern,
wherein the seal pattern is separated from the anode, and
wherein the seal pattern does not overlap the light-emitting layer.
23. A light emitting device according to claim 22 , wherein the second inorganic insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.
24. A light emitting device according to claim 22 , wherein the light emitting layer comprises an organic material.
25. A light emitting device according to claim 22 , further comprising a driving circuit around a pixel region, wherein the transistor is formed in the pixel region.
26. A light emitting device according to claim 25 , wherein the seal pattern is overlapped with the driving circuit.
27. A light emitting device comprising:
a transistor over an insulating surface comprising:
a semiconductor layer comprising a channel forming region, a source region and a drain region;
a gate insulation film; and
a gate electrode;
a first organic insulating layer over the transistor;
a first inorganic insulating layer over the first organic insulating layer;
a second organic insulating layer over the first inorganic insulating layer;
a second inorganic insulating layer over the second organic insulating layer;
a cathode over the first inorganic insulating layer and electrically connected to one of the source region and the drain region;
a light-emitting layer over the cathode;
an anode over the second inorganic insulating layer and the light-emitting layer;
a seal pattern in contact with the second inorganic insulating layer; and
a sealing plate over the anode and the seal pattern,
wherein the seal pattern is separated from the anode, and
wherein the seal pattern does not overlap the light-emitting layer.
28. A light emitting device according to claim 27 , wherein the second inorganic insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.
29. A light emitting device according to claim 27 , wherein the light-emitting layer comprises an organic material.
30. A light emitting device according to claim 27 , further comprising a driving circuit around a pixel region, wherein the transistor is formed in the pixel region.
31. A light emitting device according to claim 30 , wherein the seal pattern is overlapped with the driving circuit.