IP Library Granted Patent US 7,440,117
Granted Patent B2
US 7,440,117 · App. 11/405,051 · Granted Oct 21, 2008

Highly-sensitive displacement-measuring optical device

Assignee: Georgia Tech Research Corp.
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Quick Facts
Patent No.
US 7,440,117
App. No.
11/405,051
Granted
Oct 21, 2008
Kind
B2
Abstract

Micron-scale displacement measurement devices having enhanced performance characteristics are disclosed. One embodiment of a micron-scale displacement measurement device includes a phase-sensitive reflective diffraction grating for reflecting a first portion of an incident light and transmitting a second portion of the incident light such that the second portion of the incident light is diffracted. The device further includes a mechanical structure having a first region and a second region, the mechanical structure positioned a distance d above the diffraction grating, the second portion of the incident light is reflected off of the first region of the structure such that an interference pattern is formed by the reflected first portion and the reflected second portion of the incident light. The device can further include an electrode extending toward, but spaced a distance away from, the second region of the mechanical structure.

Claims (36)

1. A device comprising:

a phase-sensitive reflective diffraction grating for reflecting a first portion of an incident light and transmitting a second portion of the incident light such that the second portion of the incident light is diffracted;

a mechanical structure having a first region and a second region, the mechanical structure positioned a distance d above the diffraction grating, the second portion of the incident light is reflected off of the first region of the structure such that an interference pattern is formed by the reflected first portion and the reflected second portion of the incident light; and

an electrode extending toward, but spaced a distance away from, the second region of the mechanical structure.

2. The device of claim 1 , further comprising:

a controller coupled to the electrode and to the mechanical structure and configured to provide a voltage bias to at least one of the electrode and the mechanical structure.

3. The device of claim 2 , wherein the controller is configured to electrostatically actuate the mechanical structure by providing the voltage bias.

4. The device of claim 1 , wherein the mechanical structure forms a wall of a substantially sealed cavity.

5. The device of claim 4 , wherein the electrode is positioned inside the sealed cavity and between the reflective diffraction grating and a side wall of the substantially sealed cavity.

6. The device of claim 1 , wherein the distance that the electrode is spaced from the second region of the mechanical structure is selected to allow an electrostatic voltage to bias the structure.

7. The device of claim 1 , further comprising:

a controller coupled to said reflective diffraction grating for controllably adjusting at least a first feature of said reflective diffraction grating.

8. The device of claim 7 , wherein said controller controllably adjusts the distance d between the diffraction grating and the mechanical structure.

9. A method comprising:

illuminating a reflective diffraction grating with an incident light, the diffraction grating being positioned a distance d from a mechanical structure having a first region and a second region, a first portion of the incident light being reflected and a second portion of the incident light transmitted through the diffraction grating such that the second portion of the incident light is diffracted;

reflecting the second portion of the incident light off of the first region of the mechanical structure such that an interference pattern is formed by the reflected first portion and the reflected second portion of the incident light; and

applying a voltage bias to an electrode extending toward, but spaced a distance away from, the second region of the mechanical structure.

10. The method of claim 9 , further comprising:

actuating the mechanical structure by applying the voltage bias to the electrode.

11. The method of claim 9 , further comprising:

controllably adjusting at least a first feature of said reflective diffraction grating by applying the voltage bias to the electrode.

12. The method of claim 11 , further comprising:

adjusting the distance d between the diffraction grating and the mechanical structure by applying the voltage bias to the electrode.

13. A device comprising:

means for illuminating a reflective diffraction grating with an incident light, the diffraction grating being positioned a distance d from a mechanical structure having a first region and a second region, a first portion of the incident light being reflected and a second portion of the incident light transmitted through the diffraction grating such that the second portion of the incident light is diffracted;

means for reflecting the second portion of the incident light off of the first region of the mechanical structure such that an interference pattern is formed by the reflected first portion and the reflected second portion of the incident light; and

means for applying a voltage bias to an electrode extending toward, but spaced a distance away from, the second region of the mechanical structure.

14. The device of claim 13 , further comprising:

means for actuating the mechanical structure by applying the voltage bias to the electrode.

15. The device of claim 13 , further comprising:

means for controllably adjusting at least a first feature of said reflective diffraction grating by applying the voltage bias to the electrode.

16. The device of claim 15 , further comprising:

means for adjusting the distance d between the diffraction grating and the mechanical structure by applying the voltage bias to the electrode.

17. The device of claim 13 , wherein the mechanical structure forms a wall of a substantially sealed cavity.

18. The device of claim 17 , wherein the electrode is positioned inside the sealed cavity and between the reflective diffraction grating and a side wall of the substantially sealed cavity.

19. The device of claim 13 , wherein the distance that the electrode is spaced from the second region of the mechanical structure is selected to allow an electrostatic voltage to bias the structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 17, 2006
From: DEGERTEKIN, FAHRETTIN LEVENT; HALL, NEAL ALLEN; LEE, WOOK
To: GEORGIA TECHNOLOGY RESEARCH CORP.
Reel/Frame 017795/0790 →
Continuity (4)
Continuation In Part 1070493200 · Nov 10, 2003
Continuation In Part 1011249000 · Mar 29, 2002
Provisional Application 6042481000 · Nov 8, 2002
Related Publication 20060181712A1 · Aug 17, 2006