Poly etch without separate oxide decap
The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electro-mechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70° C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.
1. A method of forming a patterned polysilicon layer in a single chemical etch solution, comprising:
exposing a substrate having a photo-resist pattern on a polysilicon layer to a liquid chemical etch solution containing at least tetra methyl ammonium hydroxide and water at a preselected temperature and first concentration;
adding an ammonium hydroxide solution at approximately the same time as exposing the substrate; and
removing the substrate from the etch solution after a preselected time period.
2. The method of claim 1 , wherein the tetra methyl ammonium hydroxide temperature is in a range of approximately 60° C. to 90° C.
3. The method of claim 2 , wherein the temperature of the substrate is approximately 70° C.
4. The method of claim 1 , wherein the chemical etch solution comprises a single wafer spinning vacuum chuck with at least a tetra methyl ammonium hydroxide dispensing nozzle.
5. The method of claim 4 , wherein the dispensing nozzle provides a spray of liquid droplets, each having a temperature between 65° C. and 75° C.
6. The method of claim 1 , wherein the chemical etch solution comprises an open bath having a temperature control and heater device disposed to maintain the open bath in a temperature range of approximately 65° C. to 75° C.
7. The method of claim 1 , wherein the tetra methyl ammonium hydroxide first concentration is between 2.5% and 25% in water.
8. The method of claim 7 , wherein the tetra methyl ammonium hydroxide first concentration is 12.5% and the pH of the solution is greater than 13.
9. The method of claim 1 , wherein the ammonium hydroxide second concentration is between 25% and 45% in water.
10. The method of claim 9 , wherein the ammonium hydroxide second concentration is approximately 35% in water.
11. The method of claim 1 , wherein the fixed percentage of ammonium hydroxide solution is less than 1% of the volume of the tetra methyl ammonium hydroxide solution.
12. The method of claim 11 , wherein the fixed percentage of ammonium hydroxide solution is approximately 0.2% of the volume of the tetra methyl ammonium hydroxide solution.
13. The method of claim 11 , wherein an etch rate of a native silicon oxide layer on a top surface of the polysilicon layer is greater than 800 Angstroms per minute.
14. The method of claim 11 , wherein an etch rate of the polysilicon layer is approximately 4000 Angstroms per minute.
15. The method of claim 14 , wherein an etch rate of a doped oxide layer underneath the polysilicon layer is less than 20 Angstroms per minute.
16. A method of etching polysilicon, comprising:
adding a first volume of an ammonium hydroxide solution to a second volume of a tetra methyl ammonium hydroxide solution;
immersing at least one surface of a polysilicon layer having a patterned photo-resist mask in the ammonium hydroxide and tetra methyl ammonium hydroxide solution within a specified time period after adding the ammonium hydroxide solution, the solution having a preselected temperature; and
removing the polysilicon layer after a preselected time period.
17. The method of claim 16 , wherein the preselected temperature is approximately 70° C.
18. The method of claim 16 , wherein the tetra methyl ammonium hydroxide solution has a concentration between 7.5% and 15% in water.
19. The method of claim 18 , wherein the tetra methyl ammonium hydroxide concentration is approximately 12.5% and the pH of the solution is greater than 13.
20. The method of claim 16 , wherein the ammonium hydroxide concentration is approximately 35% in water.
21. The method of claim 16 , wherein the first volume of ammonium hydroxide solution is less than 1% of the second volume of the tetra methyl ammonium hydroxide solution.
22. The method of claim 21 , wherein the first volume of ammonium hydroxide solution is greater than 0.2% of the volume of the tetra methyl ammonium hydroxide solution.
23. The method of claim 21 , wherein an etch rate of a native silicon oxide layer on the surface of the polysilicon layer is greater than 800 Angstroms per minute.
24. The method of claim 21 , wherein an etch rate of the polysilicon layer is approximately 4000 Angstroms per minute.
25. The method of claim 24 , wherein an etch rate of a doped oxide layer disposed beneath the polysilicon layer is less than 20 Angstroms per minute.