Manufacturing a semiconductor device
View Patent ↗A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×10 20 to 1×10 21 /cm 3 , is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.
1. A method of manufacturing a semiconductor device, comprising:
forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
removing an oxide from the crystallized first semiconductor film after the irradiation of the laser;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer.
2. A method of manufacturing a semiconductor device according to claim 1 , wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.
3. A method of manufacturing a semiconductor device according to claim 1 , wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.
4. A method of manufacturing a semiconductor device according to claim 1 , wherein the barrier layer is formed by plasma CVD.
5. A method of manufacturing a semiconductor device, comprising:
forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film containing a noble gas element on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer.
6. A method of manufacturing a semiconductor device according to claim 5 , wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.
7. A method of manufacturing a semiconductor device according to claim 5 , wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.
8. A method of manufacturing a semiconductor device according to claim 5 , wherein the noble gas element is one or more kinds of elements selected from the group consisting of He, Ne, Ar, Kr, and Xe.
9. A method of manufacturing a semiconductor device according to claim 5 , wherein the barrier layer is formed by plasma CVD.
10. A method of manufacturing a semiconductor device, comprising:
forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film containing argon at a concentration of 1×10 18 /cm 3 to 1×10 22 /cm 3 on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer.
11. A method of manufacturing a semiconductor device according to claim 10 , wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.
12. A method of manufacturing a semiconductor device according to claim 10 , wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.
13. A method of manufacturing a semiconductor device according to claim 10 , wherein the barrier layer is formed by plasma CVD.
14. A method of manufacturing a semiconductor device, comprising:
forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
removing an oxide from the crystallized first semiconductor film after the irradiation of the laser;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film on the barrier layer without exposing the barrier layer to the air;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer.
15. A method of manufacturing a semiconductor device according to claim 14 , wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.
16. A method of manufacturing a semiconductor device according to claim 14 , wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.
17. A method of manufacturing a semiconductor device according to claim 14 , wherein the barrier layer is formed by plasma CVD.
18. A method of manufacturing a semiconductor device, comprising:
forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film containing a noble gas element on the barrier layer without exposing the barrier layer to the air;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer.
19. A method of manufacturing a semiconductor device according to claim 18 , wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.
20. A method of manufacturing a semiconductor device according to claim 18 , wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.
21. A method of manufacturing a semiconductor device according to claim 18 , wherein the noble gas element is one or more kinds of elements selected from the group consisting of He, Ne, Ar, Kr, and Xe.
22. A method of manufacturing a semiconductor device according to claim 18 , wherein the barrier layer is formed by plasma CVD.
23. A method of manufacturing a semiconductor device, comprising:
forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film containing argon at a concentration of 1×10 18 /cm 3 to 1×10 22 /cm 3 on the barrier layer without exposing the barrier layer to the air;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer.
24. A method of manufacturing a semiconductor device according to claim 23 , wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.
25. A method of manufacturing a semiconductor device according to claim 23 , wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.
26. A method of manufacturing a semiconductor device according to claim 23 , wherein the barrier layer is formed by plasma CVD.