Method for manufacturing nitride semiconductor wafer or nitride semiconductor device; nitride semiconductor wafer or nitride semiconductor device made by the same; and laser irradiating apparatus used for the same

1. A method for manufacturing a nitride semiconductor wafer comprising removing a disparate substrate from a nitride semiconductor layer that is grown over said disparate substrate which is different from said nitride semiconductor,

wherein removal of said disparate substrate is carried out by irradiating said disparate substrate with a laser light of a wavelength shorter than the band gap wavelength of said nitride semiconductor layer while supplying an acidic or alkaline etching solution to the interface between said disparate substrate and said nitride semiconductor layer.

2. The method for manufacturing a nitride semiconductor wafer according to claim 1 , wherein said etching solution is one selected from the group consisting of KOH, sulfuric acid, phosphoric acid, hydrofluoric acid and pyrophosphoric acid.

3. The method for manufacturing a nitride semiconductor wafer according to claim 1 , wherein said laser light is formed in a linear beam shape and is scanned over said disparate substrate.

4. The method for manufacturing a nitride semiconductor wafer according to claim 1 , wherein said disparate substrate is removed from said nitride semiconductor layer after attaching said nitride semiconductor layer that is grown over said disparate substrate onto a support substrate.

5. The method for manufacturing a nitride semiconductor wafer according to claim 1 , wherein said nitride semiconductor wafer from which said disparate substrate has been removed comprises an underlying layer of nitride semiconductor and a device structure that is provided over said underlying layer and includes an active layer which is capable of emitting ultraviolet ray, said underlying layer has a band gap energy lower than that of a portion of said device structure that is nearest to said underlying layer,

said method further comprising removing said underlying layer from said nitride semiconductor wafer by irradiating said underlying layer with excitation light which has wavelength shorter than the band gap wavelength of said underlying layer, while immersing said nitride semiconductor wafer in an acidic or alkaline etching solution.

6. The method for manufacturing a nitride semiconductor wafer according to claim 5 , wherein said excitation light is emitted by said active layer.

7. A method for manufacturing a nitride semiconductor device comprising:

growing a plurality of nitride semiconductor layers for forming devices over a disparate substrate which is different from nitride semiconductor,

attaching a support substrate on the top surface of said nitride semiconductor layer, and

removing said disparate substrate from said nitride semiconductor layer, wherein

removal of said disparate substrate is carried out by irradiating said disparate substrate with a laser light of a wavelength shorter than the band gap wavelength of said nitride semiconductor layer that is located nearest to said disparate substrate, while supplying an acidic or alkaline etching solution to the interface between said disparate substrate and said nitride semiconductor layer.

8. The method for manufacturing a nitride semiconductor device according to claim 7 , wherein said nitride semiconductor device is an ultraviolet emitting device that emits ultraviolet ray from an active layer, while the nitride semiconductor layer tat is located nearest to said disparate substrate is made of a material that absorbs the light emitted by said active layer and is removed after removing said disparate substrate.

9. The method for manufacturing a nitride semiconductor device according to claim 7 , wherein the nitride semiconductor layer that is located nearest to said disparate substrate is removed by irradiating with excitation light having wavelength shorter than the emission wavelength of said active layer, while being supplied with said etching solution.

10. The method for manufacturing a nitride semiconductor device according to claim 9 , wherein wavelength of the emission from said active layer is shorter than a band gap wavelength that corresponds to (E+0.1 eV), where E is the band gap energy of the nitride semiconductor layer located nearest to said disparate substrate.

11. The method for manufacturing a nitride semiconductor device according to claim 10 , wherein said excitation light is emitted by said active layer.

12. A method for manufacturing a nitride semiconductor wafer, comprising:

forming a stack of nitride semiconductor layers by stacking a first crystal layer made of a nitride semiconductor and a second crystal layer having at least a nitride semiconductor that has band gap energy higher than that of said first crystal layer; and

removing said first crystal layer by irradiating said first crystal layer with light having a wavelength shorter than the band gap wavelength of said first crystal layer, while immersing said stack of nitride semiconductor layers in an acidic or alkaline etching solution.

13. The method for manufacturing a nitride semiconductor wafer according to claim 12 , wherein the forming step of said stack of nitride semiconductor layers comprises polishing said first crystal layer after forming said second crystal layer, wherein said first crystal layer has uneven thickness after polishing.

14. The method for manufacturing a nitride semiconductor wafer according to claim 13 , wherein, in the forming step of said stack of nitride semiconductor layers, said first crystal layer and said second crystal layer are formed in this order over a disparate substrate that is made of a material different from nitride semiconductor, and said disparate substrate is removed, leaving a warped stack.