Methods of providing an adhesion layer for adhesion of barrier and/or seed layers to dielectric films
A process for enhancing the adhesion of directly plateable materials to an underlying dielectric is demonstrated, so as to withstand damascene processing. Using diffusion barriers onto which copper can be deposited facilitates conventional electrolytic processing. An ultra-thin adhesion layer is applied to a degassed, pre-cleaned substrate. The degassed and pre-cleaned substrate is exposed to a precursor gas containing the adhesion layer, optionally deposited by a plasma-assisted CVD process, resulting in the deposition of an adhesion layer inside the exposed feature. The treated wafer is then coated with a diffusion barrier material, such as ruthenium, so that the adhesion layer reacts with incoming diffusion barrier atoms. The adhesion layer may be selectively bias-sputter etched prior to the deposition of the diffusion barrier layer. A copper layer is then deposited on the diffusion barrier layer.
1. A method of forming an adhesion layer to facilitate barrier layer and copper deposition on a dielectric of a semiconductor wafer, comprising:
degassing said wafer;
pre-cleaning said wafer;
depositing an adhesive layer on said wafer between exposed regions of said wafer and a diffusion barrier layer using a thermally driven or plasma enhanced chemical vapor deposition process, wherein said adhesive layer comprises boron, amorphous silicon, carbon, tantalum nitride, or titanium nitride;
bias-sputter etching said wafer to selectively remove portions of said adhesion layer; and
depositing said diffusion barrier layer on said wafer, wherein said diffusion barrier layer comprises ruthenium, cobalt, tungsten, molybdenum, or rhenium.
2. A method of forming an adhesion layer and barrier layer to facilitate copper deposition on a top surface of a dielectric of a semiconductor wafer, comprising:
degassing said wafer;
pre-cleaning said wafer in a first chamber;
exposing said wafer to a precursor gas in said first chamber to deposit an adhesive layer on said top surface of said wafer using a thermally driven or plasma enhanced chemical vapor deposition process, said adhesive layer comprising boron, amorphous silicon, carbon, titanium nitride or tantalum nitride;
bias-sputter etching said adhesion layer prior to deposition of a diffusion barrier layer to provide a clean interface between said diffusion barrier layer and said copper; and
depositing said diffusion barrier layer on said wafer in a second chamber, said diffusion barrier layer comprising ruthenium, cobalt, tungsten, molybdenum, or rhenium.
3. A method of forming an adhesion layer and barrier layer to facilitate copper deposition on a top surface of a dielectric of a semiconductor wafer, comprising:
degassing said wafer;
pre-cleaning said wafer;
exposing said wafer to a precursor gas within a first chamber to deposit an adhesive layer on said top surface of said wafer in said first chamber using a thermally driven or plasma enhanced chemical vapor deposition process, said precursor gas comprising a boron-, silicon-, carbon-, titanium-, or tantalum-containing compound; and
depositing a layer of diffusion barrier on said wafer within said first chamber.