Write margin of SRAM cells improved by controlling power supply voltages to the inverters via corresponding bit lines

1. A semiconductor memory comprising:

a plurality of memory cells each having a pair of inverters whose inputs and outputs are connected to each other, and holding complementary data respectively in storage nodes which are the outputs of the inverters;

a power control circuit which sets a power supply voltage of the inverter having a storage node to which low level is written, to be lower than a power supply voltage of the inverter having a storage node to which high level is written, in a write operation during which the complementary data are written to said storage nodes, respectively; and

complementary bit lines connected to the storage nodes of said inverters via transfer switches, respectively; wherein:

said power control circuit receives write voltages supplied to said bit lines, to supply the power supply voltage to each of said inverters according to the received write voltages;

said power control circuit has a pair of power control units connected to power supply terminals of each of said inverters, respectively; and

each of said power control units has an nMOS transistor and a pMOS transistor arranged in parallel between an external power supply line and each of the power supply terminals and receiving at their gates a voltage that is an inverted voltage level of each of the bit lines.

2. The semiconductor memory according to claim 1 , wherein:

each of said inverters is formed of a pMOS transistor and an nMOS transistor that are connected in series; and

the pMOS transistor of each of said power control units has a larger size than the pMOS transistor of each of said inverters to allow larger ON current to flow through.

3. The semiconductor memory according to claim 1 , further comprising

a precharge circuit precharging said bit lines to a high level in a standby period during which said memory cells are not accessed.

4. A semiconductor memory comprising:

a plurality of memory cells each having a pair of inverters whose inputs and outputs are connected to each other and holding complementary data respectively in storage nodes which are the outputs of the inverters;

a power control circuit which sets a power supply voltage of the inverter having a storage node to which low level is written to be lower than a power supply voltage of the inverter having a storage node to which high level is written, in a write operation during which the complementary data are written to said storage nodes, respectively; and

complementary bit lines connected to the storage nodes of said inverters via transfer switches, respectively, wherein

said power control circuit receives write voltages supplied to said bit lines, to supply the power supply voltage to each of said inverters according to the received write voltages; and wherein

said power control circuit has connection switches each connecting the power supply terminal of one of said inverters to one of said bit lines when receiving a low-level write voltage supplied to one of said bit lines.

5. The semiconductor memory according to claim 4 , wherein

said power control circuit is formed commonly for said memory cells connected to said bit lines.

6. The semiconductor memory according to claim 4 , wherein

each of said connection switches includes a pMOS transistor having a gate connected to one of said bit lines, a source connected to said power supply terminal, and a drain connected to one of said bit lines.

7. The semiconductor memory according to claim 1 , wherein

said power control circuit is formed commonly for said memory cells connected to said bit lines.