Method for manufacturing an electro-optical device
View Patent ↗An object of the present invention is to provide an EL display device having high operation performance and reliability. A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46 , an EL layer 47 and a cathode 48 , and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.
1. A method for manufacturing an electro-optical device comprising:
forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface;
forming a passivation film over the first and second thin film transistors;
forming a pixel electrode over the passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor;
forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method; and
forming a second electrode over the EL layer,
wherein one of a source and a drain of the first thin film transistor is electrically connected to a gate of the second thin film transistor, and
wherein a gate of the first thin film transistor is electrically connected to a gate wiring.
2. The method according to claim 1 , further comprising:
forming a bank comprising a resin over the pixel electrode.
3. The method according to claim 1 , wherein the EL layer comprises an organic material.
4. The method according to claim 1 , wherein the ink jet method uses a piezo element.
5. The method according to claim 1 , wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).
6. The method according to claim 1 , further comprising:
forming at least one insulating film over the passivation film; and
forming a contact hole in the passivation film and the at least one insulating film,
wherein the pixel electrode is electrically connected to the one of a source and a drain of the second thin film transistor through the contact hole, and
wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.
7. A method for manufacturing an electro-optical device comprising:
forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface;
forming a passivation film over the first and second thin film transistors;
forming a pixel electrode over the passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor;
forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed an ink jet method; and
forming a second electrode over the EL layer,
wherein one of a source and a drain of the first thin film transistor is electrically connected to a gate of the second thin film transistor,
wherein a gate of the first tin film transistor is electrically connected to a gate wiring, and
wherein the EL layer and the second electrode are formed without opening to an air.
8. The method according to claim 7 , further comprising:
forming a bank comprising a resin over the pixel electrode.
9. The method according to claim 7 , wherein the EL layer comprises an organic material.
10. The method according to claim 7 , wherein the ink jet method uses a piezo element.
11. The method according to claim 7 , wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).
12. The method according to claim 7 , further comprising:
forming at least one insulating film over the passivation film; and
forming a contact hole in the passivation film and the at least one insulating film,
wherein the pixel electrode is electrically connected to the one of a source and a drain of the second thin film transistor through the contact hole, and
wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.
13. A method for manufacturing an electro-optical device comprising:
forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface;
forming a first passivation film over the first and second thin film transistors;
forming a pixel electrode over the first passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor;
forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method;
forming a second electrode over the EL layer; and
forming a second passivation film over the second electrode,
wherein one of a source and a drain of the first thin film transistor is electrically connected to a sate of the second thin film transistor, and
wherein a pate of the first thin film transistor is electrically connected to a gate wiring.
14. The method according to claim 13 , further comprising:
forming a bank comprising a resin over the pixel electrode.
15. The method according to claim 13 , wherein the EL layer comprises an organic material.
16. The method according to claim 13 , wherein the ink jet method uses a piezo element.
17. The method according to claim 13 , wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).
18. The method according to claim 13 , further comprising:
forming at least one insulating film over the first passivation film; and
forming a contact hole in the first passivation film and the at least one insulating film
wherein the pixel electrode is electrically connected to the one of a source and a drain of the second thin film transistor through the contact hole, and
wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.
19. A method for manufacturing an electro-optical device comprising:
forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface;
forming a first passivation film over the first and second thin film transistors;
forming a pixel electrode over the first passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor;
forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method;
forming a second electrode over the EL layer; and
forming a second passivation film over the second electrode,
wherein one of a source and a drain of the first thin film transistor is electrically connected to a sate of the second thin film transistor,
wherein a gate of the first thin film transistor is electrically connected to a gate wiring, and
wherein the EL layer, the second electrode and the second passivation film are formed without opening to an air.
20. The method according to claim 1 , further comprising:
forming a bank comprising a resin over the pixel electrode.
21. The method according to claim 19 , wherein the EL layer comprises an organic material.
22. The method according to claim 19 , wherein the ink jet method uses a piezo element.
23. The method according to claim 19 , wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).
24. The method according to claim 19 , further comprising:
forming at least one insulating film over the first passivation film; and
forming a contact hole in the first passivation film and the at least one insulating film,
wherein the pixel electrode is electrically connected to the one of a source and a drain of the second thin film transistor through the contact hole, and
wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.
25. A method for manufacturing an electro-optical device comprising:
forming a first thin film transistor having multi-gate structure, a second thin film transistor having single-gate structure and a storage capacitor on an insulating surface;
forming a passivation film over the first and second thin film transistors and the storage capacitor;
forming a pixel electrode over the passivation film, the pixel electrode electrically connected to the second thin film transistor;
forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method; and
forming a second electrode over the EL layer,
wherein one of a source and a drain of the first thin film transistor is electrically connected to a gate of the second thin film transistor and an electrode of the storage capacitor, and
wherein a gate of the first thin film transistor is electrically connected to a gate wiring.
26. The method according to claim 25 , further comprising:
forming a bank comprising a resin over the pixel electrode.
27. The method according to claim 25 , wherein the EL layer comprises an organic material.
28. The method according to claim 25 , wherein the ink jet method uses a piezo element.
29. The method according to claim 25 , wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).
30. The method according to claim 25 , further comprising:
forming at least one insulating film over the passivation film; and
fanning a contact hole in the passivation film and the at least one insulating film,
wherein the pixel electrode is electrically connected to the one of a source and a drain of the second thin film transistor through the contact hole, and
wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.