Semiconductor memory device having local etch stopper and method of manufacturing the same
A semiconductor memory device includes a semiconductor substrate in which a cell region and a core and peripheral region are defined. The device further comprises isolation layers formed in the semiconductor substrate to define active regions, a first gate electrode structure formed in the cell region and a second gate electrode structure formed in the core and peripheral region. Source and drain regions formed in the active regions on respective sides of each of the gate electrode structures and self-aligned contact pads are formed in the cell region in contact with the source and drain regions. An insulating interlayer is formed on the semiconductor substrate between the self-aligned contact pads, and etch stoppers are formed on the insulating interlayer between the self-aligned contact pads in the cell region.
1. A semiconductor memory device, comprising:
a semiconductor substrate in which a cell region and a core and peripheral region are defined;
isolation layers formed in the semiconductor substrate to define active regions therein;
a first gate electrode structure formed in the cell region and a second gate electrode structure formed in the core and peripheral region, wherein each one of the first and second gate electrode structures comprises a conductive layer and a gate spacer formed on sidewalls of the conductive layer;
source/drain regions formed in the active regions on respective sides of each of the first and second gate electrode structures;
self-aligned contact pads formed though an insulating interlayer formed on the semiconductor substrate to contact a source/drain region in the cell region;
etch stoppers formed on the insulating interlayer and interposed between the self-aligned contact pads in the cell region; and
top spacers formed on at least sidewalls of the gate spacers of the second gate electrode structure,
wherein respective bottom surfaces of the etch stoppers and the to spacers are coplanar.
2. The semiconductor memory device of claim 1 , wherein each one of the first and second gate electrode structures further comprises a gate oxide and a hard mask layer, wherein the conductive layer is formed on the gate oxide, the hard mask layer is formed on the conductive layer, and the gate spacers are formed on sidewalls of the conductive layer and the hard mask layer.
3. The semiconductor memory device of claim 2 , wherein the top spacers and the etch stoppers are formed from the same material layer.
4. The semiconductor memory device of claim 3 , wherein the material layer is a silicon nitride layer.
5. The semiconductor memory device of claim 1 , further comprising:
a bitline structure formed on an upper surface of the etch stoppers and an upper surface of the self-aligned contact pads.
6. The semiconductor memory device of claim 5 , wherein the upper surface of the etch stoppers and the upper surface of the self-aligned contact pads are coplanar.
7. A semiconductor memory device comprising:
a semiconductor substrate in which a cell region and a core and peripheral region are defined;
isolation layers formed in the semiconductor substrate to define active regions therein;
a first gate electrode structure formed in the cell region and a second gate electrode structure formed in the core and peripheral region, wherein each one of the first and second gate electrode structures comprises a gate oxide formed on the semiconductor substrate, a conductive layer formed on the gate oxide, a hard mask layer formed on the conductive layer, and gate spacers formed on sidewalls of the conductive layer and the hard mask layer;
source/drain regions formed in the active regions on respective sides of each of the first and second gate electrode structures;
self-aligned contact pads formed though an insulating interlayer formed on the semiconductor substrate to respectively contact a source/drain region in the cell region;
etch stoppers formed on the insulating interlayer and interposed between the self-aligned contact pads, wherein an upper surface of the etch stoppers is coplanar with an upper surface of the self-aligned contact pads; and
top spacers formed on at least sidewalls of the gate spacers of the second gate electrode structure,
wherein respective bottom surfaces of the etch stoppers and the top spacers are coplanar.
8. The semiconductor memory device of claim 7 , wherein the top spacers and the etch stoppers are formed from the same material layer.
9. The semiconductor memory device of claim 8 , wherein the material layer is a silicon nitride layer.
10. The semiconductor memory device of claim 7 , further comprising:
a bitline structure formed on an upper surface of the etch stoppers and an upper surface of the self-aligned contact pads.
11. A semiconductor memory device, comprising:
a substrate comprising a cell region and a core and peripheral region;
a first gate electrode structure formed in the cell region and a second gate electrode structure formed in the core and peripheral region, wherein each one of the first and second gate electrode structures comprises a conductive layer and gate spacers formed on sidewalls of the conductive layer;
source/drain regions formed in the substrate on respective sides of the first and second gate electrode structures;
a plurality of self-aligned contact pads, each extending through a first insulating layer formed on the substrate and an etch stopper layer formed on the first insulating layer to respectively contact a source/drain region in the cell region, such that lower portions of adjacent ones of the plurality of self-aligned contact pads are separated by the first insulating layer and upper portions of the plurality of self-aligned contact pads are separated by the etch stopper layer, wherein an upper surface for the etch stopper layer and an upper surface of the plurality of self-aligned contact pads are coplanar;
a bitline structure formed on the upper surface of the etch stopper layer and the upper surface of the plurality of self-aligned contact pads; and
top spacers formed on at least sidewalls of the gate spacers of the second ate electrode structure,
wherein respective bottom surfaces of the etch stopper layer and the top spacers are coplanar.
12. The semiconductor memory device of claim 11 , wherein each one of the first and second gate electrode structures further comprises a gate oxide and a hard mask layer, wherein the gate oxide is formed on the semiconductor substrate, the conductive layer is formed on the gate oxide, the hard mask layer is formed on the conductive layer, and the gate spacers are formed on sidewalls of the conductive layer and the hard mask layer.
13. The semiconductor memory device of claim 12 , further comprising:
a second insulating layer formed on the upper surface of the etch stopper layer and the upper surface of the plurality of self-aligned contact pads in the cell region and on the top spacers in the core and peripheral region;
bitline contact pads formed through the second insulating layer in the cell region and interconnection contact pads formed in the core and peripheral region;
a third insulating layer formed on the second insulating layer and over the bitline structure.
14. The semiconductor memory device of claim 13 , further comprising:
a plurality of storage node contact holes formed through the third insulating layer to expose the upper surface of the etch stopper layer and the upper surface of the plurality of self-aligned contact pads.