Deformable organic devices
A device is provided. The device includes a substrate, an inorganic layer disposed over the substrate, and an organic layer disposed on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer. The substrate is deformed such that there is a nominal radial or biaxial strain of at least 0.05% relative to a flat substrate at an interface between the inorganic layer and the organic layer. The nominal radial or biaxial strain may be higher, for example 1.5%. A method of making the device is also provided, such that the substrate is deformed after the inorganic layer and the organic layer are deposited onto the substrate.
1. A device fabricated by the process of:
depositing an inorganic conductive or semiconductive layer disposed over a substrate, the substrate having an original configuration;
depositing a non-substrate organic layer on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer;
deforming the substrate such that there is an average radial or biaxial strain of at least 0.05% relative to the original configuration.
2. A method of fabricating a device, comprising:
depositing an inorganic conductive or semiconductive layer disposed over a substrate, the substrate having an original configuration;
depositing a non-substrate organic layer on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer;
deforming the substrate such that there is an average radial or biaxial strain of at least 0.05% relative to the original configuration.
3. The method of claim 2 , wherein the substrate is deformed such that there is an average radial or biaxial strain of at least 1.5% relative to the original configuration.
4. The method of claim 3 , wherein the original configuration is a flat substrate.
5. The method of claim 2 , wherein the substrate is plastically deformed.
6. The method of claim 2 , wherein the substrate has a glass transition temperature, and the substrate is deformed at a temperature that exceeds its glass transition temperature.
7. The method of claim 2 , wherein the substrate is deformed at a maximum strain rate of 1.5% per 50 minutes.
8. A device, comprising:
a substrate;
an inorganic layer disposed over the substrate;
a non-substrate organic layer disposed on the inorganic layer, such that the organic layer is in direct physical contact with the inorganic layer;
wherein the substrate is deformed such that there is a nominal axial strain of at least 5% relative to a flat substrate at an interface between the inorganic layer and the organic layer.
9. A device, comprising:
a substrate;
an inorganic conductive or semiconductive layer disposed over the substrate;
a non-substrate organic layer disposed on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer;
wherein the substrate is deformed such that there is a nominal radial or biaxial strain of at least 0.05% relative to a flat substrate at an interface between the inorganic layer and the organic layer.
10. The device of claim 9 , wherein the inorganic layer forms islands.
11. The device of claim 10 , wherein the islands cover at most 50% of the surface area of the substrate.
12. The device of claim 10 , wherein the islands have a largest diameter of at least 70 microns.
13. The device of claim 10 , wherein the organic layer is a blanket layer that covers both the inorganic conductive or semiconductive layer that forms an island, and exposed regions of the substrate near the island.
14. The device of claim 9 , wherein the device is an organic light emitting device.
15. The device of claim 14 , wherein the organic layer further comprises an organic electron transport layer, an organic emissive layer, and an organic hole transport layer.
16. The device of claim 9 , wherein the device is a photosensitive organic device.
17. The device of claim 16 , wherein the organic layer further comprises a photoactive organic layer.
18. The device of claim 9 , wherein the deformed substrate forms a section of a sphere.
19. The device of claim 9 , wherein the substrate is deformed such that there is a nominal radial or biaxial strain of at least 1.5% relative to a flat substrate at an interface between the inorganic layer and the organic layer.