Non-volatile memory cells and methods of manufacturing the same

1. A method comprising:

providing a semiconductor substrate having at least two source/drain regions, and a dielectric material disposed on the substrate above at least one of the at least two source/drain regions wherein the dielectric material has an exposed surface, and wherein the at least two source/drain regions are separated by a recess trench having an exposed surface, wherein the trench extends downward into the substrate to a depth position below the at least two source/drain regions;

forming a charge-trapping layer on the exposed surfaces of the dielectric material and the recess trench; and

forming a gate above the charge-trapping layer,

wherein the dielectric material is disposed in steps comprising: depositing a masking layer on a surface of the substrate; etching a pattern in the masking layer; and depositing the dielectric material in an area of the pattern in the masking layer.

2. The method according to claim 1 , wherein the dielectric material comprises a high density plasma dielectric material.

3. The method according to claim 1 , wherein providing the semiconductor substrate comprises: providing a substrate having an extended buried diffusion implant region; depositing the dielectric material on a surface of the substrate above one or more areas of the extended buried diffusion implant region; and forming the recess trench such that the recess trench extends downward into the substrate through the extended buried diffusion implant region to form the at least two source/drain regions.

4. A method comprising:

providing a semiconductor substrate having at least two source/drain regions, and a dielectric material disposed on the substrate above at least one of the at least two source/drain regions wherein the dielectric material has an exposed surface, and wherein the at least two source/drain regions are separated by a recess trench having an exposed surface, wherein the trench extends downward into the substrate to a depth position below the at least two source/drain regions;

forming a charge-trapping layer on the exposed surfaces of the dielectric material and the recess trench; and

forming a gate above the charge-trapping layer,

wherein providing the semiconductor substrate comprises: forming the at least two source/drain regions in the substrate; depositing the dielectric material on a surface of the substrate above one or more of the at least two source/drain regions; and forming the recess trench between the at least two source/drain regions such that the recess trench extends downward into the substrate to the depth position below the at least two source/drain regions.

5. The method according to claim 4 , wherein forming the at least two source/drain regions and depositing the dielectric material comprises: providing a substrate having a gate oxide layer disposed on a surface of the substrate; depositing a masking layer on the gate oxide; etching a pattern in the masking layer; forming the at least two source/drain regions in the substrate in one or more areas of the etched pattern; and depositing the dielectric material in one or more areas of the etched pattern area above at least one of the source/drain regions.

6. The method according to claim 5 , wherein the masking layer comprises a layer of polycrystalline silicon disposed on the gate oxide and a layer of silicon nitride disposed on the polycrystalline silicon layer.

7. The method according to claim 4 wherein the dielectric material is deposited above the at least two source/drain regions and serves as a masking layer for the forming of the recess trench.

8. The method according to claim 1 , wherein providing the semiconductor substrate comprises etching the recess trench in the substrate and surface treating the exposed surface of the etched recess trench.

9. The method according to claim 8 , wherein surface treating the exposed surface of the recess trench comprises forming a sacrifice liner oxide on the exposed surface and removing the sacrifice liner oxide.

10. The method according to claim 1 , wherein the at least two source/drain implant regions are formed using ion implantation.

11. The method according to claim 10 , wherein the ion implantation comprises n-type doping.

12. The method according to claim 11 , wherein the n-type doping concentration is from about 10 19 /cm 3 to about 10 20 /cm 3 .

13. The method according to claim 10 , wherein the depth of the implant regions is from about 30 nanometers to about 200 nanometers.

14. The method according to claim 2 , wherein the high density plasma dielectric material comprises an oxide.

15. The method according to claim 1 , wherein the charge-trapping layer comprises an ONO layer.

16. The method according to claim 15 , wherein the ONO layer comprises a bottom oxide layer having a thickness of about 3 nanometer to about 10 nanometers, a middle nitride layer having a thickness of about 5 nanometers to about 10 nanometers, and a top oxide layer having a thickness of about 5 nanometers to about 15 nanometers.

17. The method according to claim 1 , wherein the gate comprises a polycrystalline silicon layer formed on the charge-trapping layer and a metal silicide layer formed on the polycrystalline silicon layer.

18. The method according to claim 17 , wherein the polycrystalline silicon layer has a thickness of about 200 nanometers to about 500 nanometers, as measured from the top of the dielectric material disposed on the surface of the substrate above one or more of the source/drain regions, and the metal silicide layer has a thickness of about 60 nanometers to about 200 nanometers.

19. The method according to claim 1 , further comprising planarizing the gate.

20. The method according to claim 16 , further comprising planarizing the polycrystalline silicon layer prior to formation of the metal silicide layer.

21. The method according to claim 17 , wherein the metal silicide layer comprises at least one compound selected from the group consisting of titanium silicide, tungsten silicide, cobalt silicide, and nickel silicide.