Method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus and lithographic assembly using the same

1. A method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus comprising:

providing a set of grid models to align a substrate to be exposed to a patterned beam of radiation in the lithographic apparatus;

obtaining alignment data by performing an alignment measurement on a first plurality of alignment marks disposed on a plurality of first substrates;

checking for each grid model of the set of grid models whether alignment data as obtained is suitable to solve the grid model and, if the alignment data is suitable to solve the grid model, adding the grid model to a subset of grid models; and

selecting a grid model from the subset of grid models with lowest residuals to use during exposure of the substrate.

2. The method according to claim 1 , wherein the method further comprises:

determining average grid model parameters of the grid model as selected; and

using the average grid model parameters as determined for process corrections.

3. The method according to claim 1 , wherein the method further comprises:

determining an average residual of said first plurality of alignment marks per position;

calculating an offset per exposure; and

using the offset per exposure as calculated for process corrections.

4. The method according to claim 1 , wherein the method comprises selecting one or more grid models from the set of grid models based on (i) the process recipe, (ii) the lithographic apparatus on which the process recipe is executed, or both (i) and (ii) after said providing a set of grid models.

5. The method according to claim 4 , wherein said selecting a grid model based on the process recipe is related to a method comprising:

performing an alignment measurement on a second plurality of alignment marks disposed on a second substrate;

performing an overlay measurement on a first plurality of overlay marks on the second substrate; and

selecting a grid model from the set of grid models with an optimized performance with respect to process corrections, the process corrections being calculated based on the alignment measurement and the overlay measurement.

6. The method according to claim 5 , wherein the second substrate is a production substrate.

7. The method according to claim 4 , wherein said selecting a grid model based on the process recipe is related to a method comprising:

performing an alignment measurement on a third plurality of alignment marks disposed on a third substrate;

performing an overlay measurement on a second plurality of overlay marks on the third substrate; and

selecting a grid model from the set of grid models with an optimized performance with respect to process corrections, the process corrections being calculated based on the alignment measurement and the overlay measurement.

8. The method according to claim 7 , wherein the third substrate is a reference substrate.

9. The method according to claim 2 , wherein using the average grid model parameters comprises:

calculating grid deformations using the average grid model parameters as determined, the grid deformations being deformations of a process grid as used in the process recipe; and

correcting the process recipe by applying the grid deformations as calculated.

10. The method according to claim 9 , wherein applying the grid deformations includes correcting a positional parameter of a group comprising translation, rotation and expansion.

11. A computer program product for performing, when executed by a processor, a method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus, the method comprising:

providing a set of grid models to align a substrate to be exposed to a patterned beam of radiation in the lithographic apparatus;

obtaining alignment data by performing an alignment measurement on a first plurality of alignment marks disposed on a plurality of first substrates;

checking for each grid model of the set of grid models whether alignment data as obtained is suitable to solve the grid model and, if the alignment data is suitable to solve the grid model, adding the grid model to a subset of grid models; and

selecting a grid model from the subset of grid models with lowest residuals to use during exposure of the substrate.

12. A lithographic assembly comprising:

a lithographic system comprising a lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate, a control unit arranged to control settings of the lithographic apparatus and an alignment system arranged to perform an alignment measurement on the substrate prior and/or after projection by the lithographic apparatus and to generate alignment data;

a metrology system comprising a metrology apparatus and a metrology control unit, said metrology system being arranged to perform an overlay measurement on said substrate and to generate metrology data as a result of the overlay measurement; and

a control system connected to both said lithographic system and said metrology system, and arranged to receive said alignment data from said lithographic system and said metrology data from said metrology system,

wherein said control system comprises a processor and a memory, said memory being connected to said processor and arranged to store a process recipe and a set of models, and wherein said lithographic assembly is arranged to perform a method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus,

the method comprising:

providing a set of grid models to align the substrate to the patterned beam of radiation in the lithographic apparatus;

obtaining alignment data by performing an alignment measurement on a first plurality of alignment marks disposed on a plurality of first substrates;

checking for each grid model of said set of grid models whether alignment data as obtained is suitable to solve the grid model and, if the alignment data is suitable to solve the grid model, adding the grid model to a subset of grid models; and

selecting a grid model from the subset of grid models with lowest residuals to use during exposure of the substrate.

13. The lithographic assembly according to claim 12 , wherein said process recipe comprises machine instructions and said control unit is arranged to apply said machine instructions to said lithographic apparatus.

14. The lithographic assembly according to claim 13 , wherein said lithographic apparatus comprises:

an illumination system configured to condition a radiation beam;

a support constructed to support the patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form the patterned radiation beam;

a substrate table constructed to hold the substrate; and

a projection system configured to project the patterned radiation beam onto a target portion of the substrate;

wherein at least one of said machine instructions in said process recipe relates to a relative position of said support with respect to said substrate table.

15. The lithographic assembly according to claim 12 , wherein said control system is an advanced process control system.

16. A device manufacturing method comprising transferring a pattern from a patterning device onto a substrate using a lithographic assembly, the lithographic assembly comprising:

a lithographic system comprising a lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate, a control unit arranged to control settings of said lithographic apparatus and an alignment system arranged to perform an alignment measurement on said substrate prior and/or after projection by said lithographic apparatus and to generate alignment data;

a metrology system comprising a metrology apparatus and a metrology control unit, said metrology system being arranged to perform an overlay measurement on said substrate and to generate metrology data as a result of the overlay measurement; and

a control system connected to both said lithographic system and said metrology system, and arranged to receive said alignment data from said lithographic system and said metrology data from said metrology system,

wherein said control system comprises a processor and a memory, said memory being connected to said processor and arranged to store a process recipe and a set of models, and wherein said lithographic assembly is arranged to perform a method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus,

the method comprising:

providing a set of grid models to align the substrate to the patterned beam of radiation;

obtaining alignment data by performing an alignment measurement on a first plurality of alignment marks disposed on a plurality of first substrates;

checking for each grid model of said set of grid models whether alignment data as obtained is suitable to solve the grid model and, if the alignment data is suitable to solve the grid model, adding the grid model to a subset of grid models; and

selecting a grid model from the subset of grid models with lowest residuals to use during exposure of the substrate.

17. A method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus, comprising:

providing a set of grid models;

obtaining alignment data by performing an alignment measurement on a first plurality of alignment marks on a plurality of first substrates;

obtaining metrology data by performing an overlay measurement on a first plurality of overlay marks on the plurality of first substrates;

checking for each grid model of said set of grid models whether alignment data as obtained is suitable to solve the grid model and, if the alignment data is suitable to solve the grid model adding the grid model to a subset of grid models;

determining simulated metrology data for each grid model of said subset of grid models;

determining overlay performance indicators of the simulated metrology data for each grid model of said subset of grid models; and

selecting the grid model using the overlay performance indicators as determined.

18. The method according to claim 17 , wherein the method further comprises:

determining grid model parameters of the grid model as selected; and

using the grid model parameters as determined for process corrections.

19. The method according to claim 18 , wherein the method further comprises calculating an expected overlay performance if said grid model parameters as determined are used for process corrections.

20. The method according to claim 17 , the method further comprising:

determining an average residual of said metrology data per overlay mark position;

calculating an offset per exposure; and

using the offset per exposure as calculated for process corrections.

21. The method according to claim 20 , wherein the method further comprises calculating an expected overlay performance if said offset per exposure as determined is calculated for process corrections.

22. The method according to claim 17 , wherein the method comprises selecting one or more grid models from the set of grid models based on (i) the process recipe, (ii) the lithographic apparatus on which the process recipe is executed after said providing a set of grid models, or both (i) and (ii).

23. The method according to claim 22 , wherein said selecting a grid model based on the process recipe is related to a method comprising:

performing an alignment measurement on a second plurality of alignment marks on a second substrate;

performing an overlay measurement on a first plurality of overlay marks on the second substrate; and

selecting a grid model from the set of grid models with an optimized performance with respect to process corrections, the process corrections being calculated based on the alignment measurement and the overlay measurement.

24. Method according to claim 23 , wherein the second substrate is a production substrate.

25. The method according to claim 22 , wherein said selecting a grid model based on the process recipe is related to a method comprising:

performing an alignment measurement on a third plurality of alignment marks on a third substrate;

performing an overlay measurement on a second plurality of overlay marks on the third substrate; and

selecting a grid model from the set of grid models with an optimized performance with respect to process corrections, the process corrections being calculated based on the alignment measurement and the overlay measurement.

26. The method according to claim 25 , wherein the third substrate is a reference substrate.

27. The method according to claim 18 , wherein using the grid model parameters comprises:

calculating grid deformations using said grid model parameters as determined, said grid deformations being deformations of a process grid as used in said process recipe; and

correcting said process recipe by applying said grid deformations as calculated.

28. The method according to claim 27 , wherein applying said grid deformations includes correcting a positional parameter of a group comprising translation, rotation and expansion.

29. A computer program product for performing, when executed by a processor, the method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus as defined by claim 17 .

30. A lithographic assembly comprising:

a lithographic system comprising a lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate, a control unit arranged to control settings of said lithographic apparatus and an alignment system arranged to perform an alignment measurement on said substrate prior and/or after projection by said lithographic apparatus and to generate alignment data;

a metrology system comprising a metrology apparatus and a metrology control unit, said metrology system being arranged to perform an overlay measurement on said substrate and to generate metrology data as a result of the overlay measurement; and

a control system connected to both said lithographic system and said metrology system, and arranged to receive said alignment data from said lithographic system and said metrology data from said metrology system, wherein said control system comprises a processor and a memory, said memory being connected to said processor and arranged to store a process recipe and a set of models, and

wherein said lithographic assembly is arranged to perform a method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus,

the method comprising:

providing a set of grid models;

obtaining alignment data by performing an alignment measurement on a first plurality of alignment marks on a plurality of first substrates;

obtaining metrology data by performing an overlay measurement on a first plurality of overlay marks on the plurality of first substrates;

checking for each grid model of said set of grid models whether alignment data as obtained is suitable to solve the grid model, and if the alignment data is suitable to solve the grid model, adding the grid model to a subset of grid models;

determining simulated metrology data for each grid model of said subset of grid models;

determining overlay performance indicators of the simulated metrology data for each grid model of said subset of grid models; and

selecting the grid model using the overlay performance indicators as determined.

31. The lithographic assembly according to claim 30 , wherein said process recipe comprises machine instructions and said control unit is arranged to apply said machine instructions to said lithographic apparatus.

32. The lithographic assembly according to claim 31 , wherein said lithographic apparatus comprises:

an illumination system configured to condition a radiation beam;

a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form the patterned radiation beam;

a substrate table constructed to hold the substrate; and

a projection system configured to project the patterned radiation beam onto a target portion of the substrate,

wherein at least one of said machine instructions in said process recipe relates to a relative position of said support with respect to said substrate table.

33. The lithographic assembly according to claim 30 , wherein said control system is an advanced process control system.

34. A device manufacturing method comprising transferring a pattern from a patterning device onto a substrate using a lithographic assembly, the lithographic assembly comprising:

a lithographic system comprising a lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate, a control unit arranged to control settings of said lithographic apparatus and an alignment system arranged to perform an alignment measurement on said substrate prior and/or after projection by said lithographic apparatus and to generate alignment data;

a metrology system comprising a metrology apparatus and a metrology control unit, said metrology system being arranged to perform an overlay measurement on said substrate and to generate metrology data as a result of the overlay measurement; and

a control system connected to both said lithographic system and said metrology system, and arranged to receive said alignment data from said lithographic system and said metrology data from said metrology system, wherein said control system comprises a processor and a memory, said memory being connected to said processor and arranged to store a process recipe and a set of models, and wherein said lithographic assembly is arranged to perform the method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus, the method comprising:

providing a set of grid models;

obtaining alignment data by performing an alignment measurement on a first plurality of alignment marks on a plurality of first substrates;

obtaining metrology data by performing an overlay measurement on a first plurality of overlay marks on the plurality of first substrates;

checking for each grid model of said set of grid models whether alignment data as obtained is suitable to solve the grid model, and if the alignment data is suitable to solve the grid model, adding the grid model to a subset of grid models;

determining simulated metrology data for each grid model of said subset of grid models;

determining overlay performance indicators of the simulated metrology data for each grid model of said subset of grid models; and

selecting the grid model using the overlay performance indicators as determined.