Semiconductor light emitting device, light emitting module and lighting apparatus
An LED array chip ( 2 ) includes blue LEDs ( 6 ) and red LEDs ( 8 ). The blue LEDs ( 6 ) are formed by epitaxial growth on an SiC substrate ( 4 ). Bonding pads ( 46 and 48 ) are formed on the SiC substrate ( 4 ) in a wafer fabrication process. The red LEDs ( 8 ) are separately manufactured from the blue LEDs ( 6 ), and flip-chip mounted on the bonding pads ( 46 and 48 ) formed on the SiC substrate.
1. A semiconductor light emitting device comprising:
a substrate;
a plurality of semiconductor blue-light emitting elements each having an epitaxial structure on the substrate;
a plurality of semiconductor red-light emitting elements that have been mounted on an electrically conductive pattern provided on the substrate; and
a phosphor that covers the semiconductor blue-light emitting elements and the semiconductor red-light emitting elements, wherein
each semiconductor red-light emitting element has been flip-chip mounted via at least one bump,
a vertical height of each semiconductor red-light emitting element from a main surface of the substrate is greater than a vertical height of each semiconductor blue-light emitting element from the main surface of the substrate, and
the semiconductor red-light emitting elements and the semiconductor blue-light emitting elements are arranged in a matrix, in such a manner that each semiconductor red-light emitting element is adjacent to semiconductor blue-light emitting elements in both row and column directions, except for some of the semiconductor blue-light emitting elements which are at corners of the substrate.
2. The semiconductor light emitting device of claim 1 , wherein each semiconductor blue-light emitting element comprises a blue LED, and each semiconductor red-light emitting element comprises a red LED, and the phosphor converts blue light emitted by the blue LEDs into green-yellow light.
3. The semiconductor light emitting device of claim 2 , wherein red light, which is emitted by the red LEDs, has a peak emission wavelength within a range of 615 nm and 635 nm,
the blue light has a peak emission wavelength within a range of 450 nm and 470 nm, and
the green-yellow light has a peak emission wavelength within a range of 540 nm and 560 nm.
4. The semiconductor light emitting device of claim 3 , wherein
the red light has a peak emission wavelength within a range of 620 nm and 630 nm,
the blue light has a peak emission wavelength within a range of 455 nm and 465 nm, and
the green-yellow light has a peak emission wavelength within a range of 545 nm and 555 nm.
5. The semiconductor light emitting device of claim 2 , wherein
the phosphor is a silicate phosphor (Ba, Sr) 2 SiO 4 :Eu 2+ .
6. The semiconductor light emitting device of claim 2 , wherein
the substrate is made of one of SiC and AlN materials.
7. The semiconductor light emitting device of claim 2 , further comprising:
a wiring pattern that electrically connects the blue LEDs and the red LEDs together.
8. The semiconductor light emitting device of claim 7 , wherein
the wiring pattern connects the blue LEDs and the red LEDs together in series.
9. A light emitting module comprising:
a printed-wiring board; and
a semiconductor light emitting device including:
a substrate;
a plurality of semiconductor blue-light emitting elements each having an epitaxial structure on the substrate;
a plurality of semiconductor red-light emitting elements that have been mounted on an electrically conductive pattern provided on the substrate; and
a phosphor that covers the semiconductor blue-light emitting elements and the semiconductor red-light emitting elements, wherein
each semiconductor red-light emitting element has been flip-chip mounted via at least one bump,
a vertical height of each semiconductor red-light emitting element from a main surface of the substrate is greater than a vertical height of each semiconductor blue-light emitting element from the main surface of the substrate, and
the semiconductor red-light emitting elements and the semiconductor blue-light emitting elements are arranged in a matrix, in such a manner that each semiconductor red-light emitting element is adjacent to semiconductor blue-light emitting elements in both row and column directions, except for some of the semiconductor blue-light emitting elements which are at corners of the substrate.
10. The light emitting module of claim 9 , further comprising:
a lighting apparatus including a closed structure in which the light emitting module is disposed.
11. The light emitting module of claim 9 , wherein each semiconductor blue-light emitting element comprises a blue LED, and each semiconductor red-light emitting element comprises a red LED, and the phosphor converts blue light emitted by the blue LEDs into green-yellow light.
12. The light emitting module of claim 11 , wherein red light, which is emitted by the red LEDs, has a peak emission wavelength within a range of 615 nm and 635 nm,
the blue light has a peak emission wavelength within a range of 450 nm and 470 nm, and
the green-yellow light has a peak emission wavelength within a range of 540 nm and 560 nm.
13. The light emitting module of claim 11 , wherein the red light has a peak emission wavelength within a range of 620 nm and 630 nm,
the blue light has a peak emission wavelength within a range of 455 nm and 465 nm, and
the green-yellow light has a peak emission wavelength within a range of 545 nm and 555 nm.
14. The light emitting module of claim 11 , wherein the phosphor is a silicate phosphor (Ba, Sr) 2 SiO 4 :Eu 2+ .
15. The light emitting module of claim 9 , wherein
the substrate is made of one of SiC and AlN materials.
16. The light emitting module of claim 9 , further comprising:
a wiring pattern that electrically connects the blue LEDs and the red LEDs together.
17. The light emitting module of claim 16 , wherein
the wiring pattern connects the blue LEDs and the red LEDs together in series.
18. A method for manufacturing a semiconductor light emitting device comprising:
providing a substrate;
growing a plurality of semiconductor blue-light emitting elements on the substrate with an epitaxial structure;
providing a plurality of semiconductor red-light emitting elements on an electrically conductive pattern provided on the substrate; and
providing a phosphor that covers the semiconductor blue-light emitting elements and the semiconductor red-light emitting elements, wherein
the semiconductor red-light emitting elements are provided by flip-chip mounting each semiconductor red-light emitting element via at least one bump,
a vertical height of each semiconductor red-light emitting element from a main surface of the substrate is greater than a vertical height of each semiconductor blue-light emitting element from the main surface of the substrate, and
the semiconductor red-light emitting elements and the semiconductor blue-light emitting elements are arranged in a matrix, in such a manner that each semiconductor red-light emitting element is adjacent to semiconductor blue-light emitting elements in both row and column directions, except for some of the semiconductor blue-light emitting elements which are at corners of the substrate.
19. The method of claim 18 , wherein each semiconductor blue-light emitting element comprises a blue LED, and each semiconductor red-light emitting element comprises a red LED, and the phosphor converts blue light emitted by the blue LEDs into green-yellow light.
20. The method of claim 18 , further comprising:
forming a wiring pattern that electrically connects the blue LEDs and the red LEDs together.