Computer-implemented methods, carrier media, and systems for detecting defects on a wafer based on multi-core architecture
Computer-implemented methods, carrier media, and systems for detecting defects on a wafer based on multi-core architecture are provided. One computer-implemented method for detecting defects on a wafer includes acquiring output for the wafer generated by an inspection system. Dies are formed on the wafer, and multiple cores are formed in the dies. The method also includes detecting defects on the wafer by comparing the output for a first of the multiple cores to the output for a second of the multiple cores. The first and second of the multiple cores are formed in the same die, different dies, or the same die and different dies.
1. A computer-implemented method for detecting defects on a wafer, comprising:
acquiring output for the wafer generated by an inspection system, wherein dies are formed on the wafer, wherein multiple cores are formed in the dies, and wherein the multiple cores have a period in the dies greater than a period of repetitive patterned features formed in the dies; and
detecting defects on the wafer by comparing the output for a first of the multiple cores to the output for a second of the multiple cores, wherein the first and second of the multiple cores are formed in the same die, different dies, or the same die and different dies.
2. The method of claim 1 , wherein the first and second of the multiple cores are located adjacent to each other in the same die.
3. The method of claim 1 , wherein the first and second of the multiple cores are not located adjacent to each other in the same die.
4. The method of claim 1 , wherein the first and second of the multiple cores are homogenous multiple cores.
5. The method of claim 1 , wherein said comparing comprises comparing substantially an entirety of the first of the multiple cores to substantially an entirety of the second of the multiple cores.
6. The method of claim 1 , wherein said comparing is not performed based on periodicity and repeatability of patterned features formed in the multiple cores.
7. The method of claim 1 , wherein results of said comparing are independent of patterned features formed on a layer of the wafer underlying a layer of the wafer on which the defects are being detected.
8. The method of claim 1 , wherein noise in results of said comparing caused by process variations across the wafer is substantially suppressed due to periodicity of the multiple cores.
9. The method of claim 1 , wherein noise in results of said comparing caused by color variations across the wafer is substantially suppressed due to periodicity of the multiple cores.
10. The method of claim 1 , wherein the first and second of the multiple cores are formed in a die located adjacent to an edge of the wafer, wherein only a portion of the die located adjacent to the edge of the wafer is formed on the wafer, and wherein said detecting comprises detecting the defects in the die located adjacent to the edge of the wafer.
11. The method of claim 1 , further comprising rotating the output for one of the first and second of the multiple cores prior to said comparing.
12. The method of claim 1 , further comprising translating the output for one of the first and second of the multiple cores prior to said comparing.
13. The method of claim 1 , further comprising rotating and translating the output for one of the first and second of the multiple cores prior to said comparing.
14. The method of claim 1 , further comprising filtering the output prior to said comparing using a filtering technique that has substantially the same symmetry as the multiple cores.
15. The method of claim 1 , further comprising identifying a plane of mirror symmetry between the first and second of the multiple cores prior to said comparing and aligning the first and second of the multiple cores to each other based on the plane of mirror symmetry prior to said comparing.
16. The method of claim 1 , wherein the output comprises digitized images of the wafer.
17. The method of claim 1 , wherein said comparing comprises comparing individual pixels in the output for the first and second of the multiple cores to each other, and wherein the individual pixels that are compared to each other are located at corresponding positions across a plane of mirror symmetry between the first and second of the multiple cores.
18. The method of claim 1 , wherein said detecting comprises applying a threshold to results of said comparing.
19. A carrier medium, comprising program instructions executable on a computer system for performing a computer-implemented method for detecting defects on a wafer, wherein the computer-implemented method comprises:
acquiring output for the wafer generated by an inspection system, wherein dies are formed on the wafer, wherein multiple cores are formed in the dies, and wherein the multiple cores have a period in the dies greater than a period of repetitive patterned features formed in the dies; and
detecting defects on the wafer by comparing the output for a first of the multiple cores to the output for a second of the multiple cores, wherein the first and second of the multiple cores are formed in the same die, different dies, or the same die and different dies.
20. A system configured to detect defects on a wafer, comprising:
an inspection system configured to generate output for the wafer, wherein dies are formed on the wafer, wherein multiple cores are formed in the dies, and wherein the multiple cores have a period in the dies greater than a period of repetitive patterned features formed in the dies; and
a computer system configured to detect defects on the wafer by comparing the output for a first of the multiple cores to the output for a second of the multiple cores, wherein the first and second of the multiple cores are formed in the same die, different dies, or the same die and different dies.