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A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.
1. A method of forming a semiconductor device comprising:
forming a first layer comprising a first low-k dielectric over a substrate with a first surface
exposing the first low-k dielectric to a plasma comprising nitrogen wherein the first layer comprises a nitrogen concentration of from 4.5 to 5.5 atomic percent at a depth of about 40 Angstroms away from the first surface and
depositing a second layer over the first layer.
2. A method of forming a semiconductor device comprising:
forming a low-k dielectric material over a substrate;
depositing a liner on a portion of the low-k dielectric material;
exposing the liner to a plasma;
and depositing a layer over the liner, wherein the liner comprises a first surface and a second surface, the first surface contacting the low-k dielectric material, and wherein the liner has a thickness from 10 Angstroms to 100 Angstroms, and further wherein the liner comprises a nitrogen concentration from 4.5 to 5.5 atomic percent at a depth of about 40 Angstroms away from the second surface.
3. The method of forming a semiconductor device of claim 2 wherein the plasma comprises of at least one of nitrogen or N 2 .
4. The method of forming a semiconductor device of claim 2 , wherein the plasma comprises helium (He).
5. The method of forming a semiconductor device of claim 2 , wherein the plasma comprises nitrogen and at least one other gas selected from helium, argon or another inert gas.
6. The method of forming a semiconductor device of claim 2 , wherein the plasma comprises a nitrogen containing gas that liberates N atoms in the plasma.
7. The method of forming a semiconductor device of claim 2 further comprising:
forming a recess in the low-k dielectric material, wherein a portion of the liner material is deposited on a sidewall of the recess.
8. The method of forming a semiconductor device of claim 3 , wherein the plasma is formed using a source power from 500 Watts to 1500 Watts, a substrate bias power from 0 Watts to 200 Watts, a pressure from 1 mTorr to 100 mTorr, and a time from 1 second to 120 seconds.
9. The method of forming a semiconductor device of claim 2 , wherein the liner comprises a material having a dielectric constant of 3.1 and below.
10. The method of forming a semiconductor device of claim 2 , wherein the layer comprises copper.
11. The method of forming a semiconductor device of claim 2 further comprising:
forming a barrier material over the liner material.
12. A method of forming a semiconductor device comprising:
forming a low-k dielectric material over a substrate;
depositing a liner on a portion of the low-k dielectric material;
exposing the liner to a plasma;
and depositing a layer over the liner, wherein the liner comprises a first surface and a second surface, the first surface contacting the low-k dielectric material, and wherein a density of the liner at the second surface is greater than the density of the liner at the first surface.