Recess channel transistor for preventing deterioration of device characteristics due to misalignment of gate layers and method of forming the same

1. A method of forming a recess channel transistor in a semiconductor substrate having an activation region defined by adjoining device insulation regions, the method comprising the steps of:

etching gate forming portions in the activation region, so as to form first recesses;

etching the device insulation regions, so as to form trenches;

filling each trench and each first recess with an insulation layer;

etching a center portion of the insulation layer filled inside each first recess and continue etching the semiconductor substrate under the etched center portion of the insulation layer, so as to make second recesses that are deeper than the first recesses, wherein the unetched portions outside the etched center portion of the insulation layer remaining at near the opening of each second recess forms insulation buffer patterns;

forming a gate insulation layer on an inner wall of each second recess, excluding the surface of the insulation buffer patterns;

forming a gate conductive layer on the whole surface of the substrate having the second recesses and the insulation buffer patterns;

etching the gate conductive layer, so as to form the gates such that each gate comprises a recess gate formed inside one second recess and a top gate formed on the recess gate;

forming spacers at both sidewalls of each gate; and

performing source/drain ion implant on the resultant of the substrate, so as to form a source region and a drain region at both sides of each gate in the substrate,

wherein the source and drain regions have an even doping profile due to an existence of insulation buffer patterns.

2. The method of forming a recess channel transistor as claimed in claim 1 , wherein each of the first recesses is formed at a depth of 100˜300 Å measured from the surface of the semiconductor substrate.

3. The method of forming a recess channel transistor as claimed in claim 1 , wherein each of the second recesses is formed at a depth of 500˜1000 Å measured from the surface of the semiconductor substrate.

4. The method of forming a recess channel transistor as claimed in claim 1 , wherein the insulation buffer patterns are formed of a nitride layer or a nitric oxide layer.

5. The method of forming a recess channel transistor as claimed in claim 1 , wherein the insulation buffer patterns are formed to a depth of 100˜300 Å measured from the surface of the substrate.

6. The method of forming a recess channel transistor as claimed in claim 1 , wherein each insulation buffer pattern is formed to a width of 50˜500 Å measured from the inner surface of the second recess.

7. The method of forming a recess channel transistor as claimed in claim 1 , the step of etching the gate conductive layer comprising the substep of:

forming a hard mask layer on the gate conductive layer prior to etching.

8. A method of forming a recess channel transistor in a semiconductor substrate having an activation region defined by adjoining device insulation regions, the method comprising the steps of:

etching gate forming portions in the activation region, so as to form first recesses;

forming an insulation layer on the entire surface of the substrate including the first recesses;

blanket etching the insulation layer, so as to form insulation buffer patterns on the sidewalls of each first recess;

etching a bottom surface of each first recess exposed between the insulation buffer patterns, so as to make a second recess deeper than the first recess;

forming a gate insulation layer on the surface of each of the second recesses, excluding the surface of the insulation buffer patterns;

forming a gate conductive layer on the entire surface of the substrate having the second recesses and insulation buffer patterns formed thereon, so that the second recesses including the gate insulation layer are filled with the gate conductive layer;

etching the gate conductive layer, so as to form the gates such that each gate comprises a recess gate formed inside one second recess and a top gate formed on the recess gate;

forming spacers at both sidewalls of the gates; and

performing source/drain ion implant on the resultant of the substrate, so as to form source and drain regions at both sides of each gate in the substrate,

wherein the source and drain regions have an even doping profile due to the existence of insulation buffer patterns.

9. The method of forming a recess channel transistor as claimed in claim 8 , wherein each of the first recesses is formed to a depth of 100˜300 Å measured from the surface of the substrate.

10. The method of forming a recess channel transistor as claimed in claim 8 , wherein the insulation buffer patterns are formed of a nitride layer or a nitric oxide layer.

11. The method of forming a recess channel transistor as claimed in claim 8 , wherein each of the insulation buffer patterns is formed to a depth of 100˜300 Å measured from the surface of the substrate.

12. The method of forming a recess channel transistor as claimed in claim 8 , wherein each of the insulation buffer patterns is formed to a width of 50˜500 Å measured from the inner surface of the second recesses.

13. The method of forming a recess channel transistor as claimed in claim 8 , wherein each of the second recesses is formed to a depth of 500˜1000 Å measured from the surface of the substrate.

14. The method of forming a recess channel transistor as claimed in claim 8 , the step of etching the gate conductive layer comprising the substep of:

forming a hard mask layer on the gate conductive layer prior to etching.