Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere
View Patent ↗After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH 3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O 2 atmosphere. By annealing the film in an O 2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
1. A method of fabricating a metal compound thin film comprising the steps of:
forming an interface layer or an antidiffusion film on a substrate;
forming a metal oxide film on the interface layer or the antidiffusion film by an atomic layer deposition method;
a first annealing in which the metal oxide film in an atmosphere including a nitrogen compound gas is annealed at a temperature of 750° C.-950° C., so as to diffuse nitrogen in the metal oxide film and form a metal oxynitride film in an amorphous state; and
a second annealing in which the metal oxynitride film is annealed in an atmosphere including an oxidizing gas at a temperature of 850° C.-950° C.,
wherein said step of forming the metal oxide film and the step of forming the metal oxynitride film are repeated several times, whereupon said second annealing is performed.
2. The method of fabricating a metallic compound thin film according to claim 1 , wherein the metal oxide film includes elements selected from a group comprising Hf, Zr, Al, Si, Y and lanthanoids.
3. A method of fabricating a semiconductor device including a step of forming a metallic compound thin film on a semiconductor substrate, wherein the metallic compound thin film is formed by a method according to claim 1 .
4. A method of fabricating a semiconductor device comprising the steps of:
forming a gate insulator and a conductive film on a semiconductor substrate in the stated order; and
patterning the gate insulator and the conductive film so as to form a gate part, wherein
the gate insulator is formed by a method of fabricating a metallic compound thin film according to claim 1 .