IC with fully integrated DC-to-DC power converter
In general, in one aspect, the disclosure describes a semiconductor device that includes a functional circuit and a dc-to-dc power converter. The power converter converts, regulates, and filters a DC input voltage to produce a DC output voltage and provides the DC output voltage to the functional circuit. The dc-to-dc power converter has an operating frequency above 10 MHz.
1. An apparatus comprising:
a functional circuit formed in a semiconductor die; and
a dc-to-dc switching power converter coupled to said functional circuit, to convert, regulate, and filter a DC input voltage to produce a DC output voltage and provide the DC output voltage to the functional circuit, wherein the dc-to-dc power converter has a switching frequency above 10 MHz, wherein the dc-to-dc switching power converter includes a main control circuit, a plurality of phase control circuits electrically coupled to the main control circuit, and a plurality of power stage transistors coupled to the plurality of phase control circuits, wherein the main control circuit, the plurality of phase control circuits, and the plurality of power stage transistors are formed in the semiconductor die, wherein power for the plurality of power stage transistors is to be provided via underutilized die interconnect elements on the semiconductor die, wherein the underutilized die interconnect elements are within cache memory formed in the semiconductor die and are not required to provide power or signals to the cache memory, and wherein at least a portion of the plurality of power stage transistors are formed within the cache memory.
2. The apparatus of claim 1 , wherein the dc-to-dc switching power converter further includes one or more inductors electrically coupled to the one or more power stage transistors.
3. The apparatus of claim 2 , wherein the dc-to-dc switching power converter further includes one or more capacitors electrically coupled to the one or more inductors.
4. The apparatus of claim 2 , wherein the one or more inductors are formed on a package substrate.
5. The apparatus of claim 1 , wherein the functional circuit provides two or more control parameters to the dc-to-dc switching power converter.
6. The apparatus of claim 5 , wherein the two or more control parameters includes one or more of: a functional circuit supply voltage, a functional circuit supply current, a functional circuit operating temperature, a functional circuit activity, a functional circuit oscillator frequency, and a functional circuit power-state.
7. The apparatus of claim 1 , wherein said functional circuit is a microprocessor.
8. The apparatus of claim 1 , wherein the semiconductor die includes more than one million transistors.
9. The apparatus of claim 1 , wherein the die interconnect elements are Controlled Collapse Chip Connected (C4) bumps.
10. An apparatus comprising:
a functional circuit formed in a semiconductor die; and
a dc-to-dc switching power converter coupled to said functional circuit, to convert, regulate, and filter a DC input voltage to produce a DC output voltage and provide the DC output voltage to the functional circuit, wherein the dc-to-dc power converter has a switching frequency above 10 MHz, wherein the dc-to-dc switching power converter includes a main control circuit, a plurality of phase control circuits electrically coupled to the main control circuit, and a plurality of power stage transistors coupled to the plurality of phase control circuits, wherein the main control circuit, the plurality of phase control circuits, and the plurality of power stage transistors are formed in the semiconductor die, wherein power for the plurality of power stage transistors is to be provided via underutilized die interconnect elements on the semiconductor die, wherein the underutilized die interconnect elements are die interconnect elements that are not required to provide power or signals to the circuitry formed in that portion of the semiconductor die, wherein the underutilized die interconnect elements are within cache memory formed in the semiconductor die.
11. The apparatus of claim 10 , wherein at least a portion of the plurality of power stage transistors are formed within the cache memory.
12. An apparatus comprising:
a functional circuit formed in a semiconductor die;
a dc-to-dc switching power converter coupled to said functional circuit, to convert, regulate, and filter a DC input voltage to produce a DC output voltage and provide the DC output voltage to the functional circuit, wherein the dc-to-dc power converter has a switching frequency above 10 MHz, wherein the dc-to-dc switching power converter includes a main control circuit, a plurality of phase control circuits electrically coupled to the main control circuit, and a plurality of power stage transistors coupled to the plurality of phase control circuits, wherein the main control circuit, the plurality of phase control circuits, and the plurality of power stage transistors are formed in the semiconductor die, wherein power for the plurality of power stage transistors is to be provided via underutilized die interconnect elements on the semiconductor die, wherein the underutilized die interconnect elements are die interconnect elements that are not required to provide power or signals to the circuitry formed in that portion of the semiconductor die; and
on die metal layers to distribute the power over the semiconductor die to the plurality of power stage transistors.