TFT array substrate and photo-masking method for fabricating same
An exemplary method for fabricating a thin film transistor array substrate ( 200 ) includes: providing an insulating substrate ( 201 ); coating a transparent conductive layer ( 202 ) and a gate metal layer ( 203 ) on the substrate; forming a gate electrode ( 213 ) and a pixel electrode ( 212 ) using a first photo-mask process; forming a gate insulating layer ( 204 ), an amorphous silicon layer ( 205 ), a doped amorphous silicon layer ( 206 ), and a source/drain metal layer ( 207 ) on the substrate; forming a plurality of source electrodes ( 227 ) and a plurality of drain electrodes ( 228 ) using a second photo-mask process; depositing a metal layer ( 208 ) on the substrate and the pixel electrodes; and forming a passivation layer ( 209 ) on the source electrodes, the drain electrodes and the channels and a plurality of metal contact layers ( 218 ) using a third photo-mask process.
1. A method for fabricating a thin film transistor (TFT) array substrate, the method comprising:
providing an insulating substrate;
coating a transparent conductive layer and a gate metal layer on the substrate;
forming a gate electrode and a pixel electrode using a first photo-mask process;
forming a gate insulating layer, an amorphous silicon layer, a doped amorphous silicon layer, and a source/drain metal layer on the substrate having the gate electrode and the pixel electrode;
forming a source electrode and a drain electrode using a second photo-mask process, the source electrode and the drain electrode defining a channel therebetween, the second photo-mask process comprising coating a photo-resist layer on the source/drain metal layer, exposing the photo-resist layer using a photo-mask comprising a slit, and developing the exposed photo-resist layer to form a photo-resist pattern having a groove;
forming a metal layer on the substrate and the pixel electrode;
forming a passivation material layer on the source electrode, the drain electrode, the channel, and the metal layer; and
forming a passivation layer on the source electrode, the drain electrode and the channel and a metal contact layer using a third photo-mask process, the metal contact layer interconnecting the drain electrode and the pixel electrode.
2. The method as claimed in claim 1 , wherein the first photo-mask process comprises coating a photo-resist layer on the gate metal layer, exposing the photo-resist layer using a first photo-mask, and developing the exposed photo-resist layer to form a photo-resist pattern.
3. The method as claimed in claim 2 , wherein the first photo-mask process further comprises etching the gate metal layer and the transparent conductive layer using the photo-resist pattern as a mask to form the gate electrode and the pixel electrode, and removing the photo-resist pattern.
4. The method as claimed in claim 1 , wherein the second photo-mask process further comprises melting the photo-resist pattern having the groove to form a planar photo-resist layer.
5. The method as claimed in claim 1 , wherein the second photo-mask process further comprises removing the photo-resist pattern having the groove, coating another photo-resist layer, exposing said another photo-resist layer from a back of the substrate using the gate electrode, the source electrode and the drain electrode as masks, and developing the exposed said another photo-resist layer to form a planar photo-resist layer.
6. The method as claimed in claim 1 , wherein the substrate is made from glass or quartz.
7. The method as claimed in claim 1 , wherein the transparent conductive layer is made from indium tin oxide or indium zinc oxide.
8. The method as claimed in claim 1 , wherein the gate metal layer is made from material including any one or more items selected from the group consisting of aluminum, molybdenum, copper, chromium, and tantalum.
9. The method as claimed in claim 1 , wherein the source/drain metal layer is made from material including any one or more items selected from the group consisting of aluminum, aluminum alloy, molybdenum, tantalum, and molybdenum-tungsten alloy.