Temperature sensor for liquid crystal display device
A temperature sensing apparatus for a liquid crystal display device is disclosed. The apparatus can measure the device temperature without the existence of a conventional PN junction. The temperature sensing apparatus comprises at least one thin-film transistor (TFT) cell, a variable current source, a buffer and a sensing circuit. Each TFT cell has its respective drain and gate coupled together and a source coupled to a ground. The variable current source is coupled to the drain of the TFT cell. The buffer has an input coupled to the drain of the TFT cell. The sensing circuit has an input coupled to an output of the buffer and an output to produce a voltage output signal. The temperature of the TFT cell is determined by inputting two currents at a sub-saturation region of the TFT cell and measuring voltage output signal difference.
1. A temperature sensing apparatus for liquid crystal display device, comprising:
at least one thin-film transistor (TFT) cell, said TFT including a gate, a source and a drain, wherein said TFT cell having said drain and said gate coupled together and said source coupled to a ground;
a variable current source coupled to said drain of said TFT cell, wherein said variable current source further comprises two current sources and a switch; a buffer having an input coupled to said drain of said TFT cell; and
a sensing circuit having an input coupled to an output of said buffer and an output to produce a voltage output signal,
wherein temperature is determined by sequentially connecting said switch to said two current sources and inputting two currents at a sub-saturation region of said TFT cell and measuring voltage output signal difference.
2. The temperature sensing apparatus for liquid crystal display device according to claim 1 , wherein said sensing circuit comprises two capacitors and an operational amplifier.
3. A temperature sensing apparatus for liquid crystal display device, comprising:
at least one thin-film transistor (TFT) cell, said TFT including a gate, a source and a drain, wherein said TFT cell having said drain and said gate coupled together and said source coupled to a ground;
a variable current source coupled to said drain of said TFT cell, wherein said variable current source further comprises two current sources;
a buffer having an input coupled to said drain of said TFT cell; and a sensing circuit having an input coupled to an output of said buffer and an output to produce a voltage output signal,
wherein temperature is determined by inputting two currents of the two current sources in a sequential manner at a sub-saturation region of said TFT cell and measuring voltage output signal difference.
4. The temperature sensing apparatus for liquid crystal display device according to claim 3 , wherein said TFT cell is formed of amorphous silicon.
5. The temperature sensing apparatus for liquid crystal display device according to claim 3 , wherein said TFT cell is formed of polysilicon.
6. The temperature sensing apparatus for liquid crystal display device according to claim 3 , wherein said TFT cell is formed of low temperature polysilicon (LTPS).
7. The temperature sensing apparatus for liquid crystal display device according to claim 3 , wherein said buffer comprises a source follower.
8. The temperature sensing apparatus for liquid crystal display device according to claim 7 , wherein said source follower comprises a bias current source and a PMOS.