Trench capacitor and method for manufacturing the same
A structure of a trench capacitor and method for manufacturing the same. The method includes providing a substrate having a defined memory area and logic area, and performing an STI process to form at least one STI region on the memory area of the substrate and at least one STI region on the logic area of the substrate. Then, a patterned mask is formed on the substrate and the STI region to partially expose the STI region and partially expose the substrate surrounding the STI region. Next, the STI region and the substrate not covered by the mask are etched to from a plurality of deep trench.
1. A method of manufacturing a trench capacitor, the method comprising:
providing a substrate having a defined memory array area and logic area;
performing an STI process, at least one STI region formed within the substrate in each of the memory array and the logic areas;
forming a patterned mask on the substrate and the STI region, the mask partially exposing the STI region and partially exposing the substrate in peripheral regions of the STI region in the memory array areas; and
etching the substrate and the STI region of the memory array area not covered by the mask to form a plurality of deep trenches.
2. The method of claim 1 further comprising forming an oxide layer and a silicon nitride layer on the substrate prior to forming the STI region.
3. The method of claim 1 wherein the mask comprises a photoresist layer.
4. The method of claim 1 wherein the mask comprises a hard mask, a BARC deposited on the hard mask, and a photoresist layer deposited on the BARC.
5. The method of claim 4 wherein the material of the hard mask is selected from the group consisting of dielectric material, silicon dioxide, silicon nitride, silicon-oxy-nitride, phosphorous silicate glass (PSG), boron phosphorous silicate glass (BPSG), silicate, or carbide.
6. The method of claim 1 further comprising forming a capacitor bottom electrode, a capacitor dielectric layer, and a capacitor top electrode in each deep trench.
7. The method of claim 6 wherein the capacitor dielectric layer comprises an oxide/nitride/oxide layer.
8. A method of manufacturing trench capacitor, the method comprising:
providing a substrate having a defined memory array area and logic area;
depositing sequentially an oxide layer and a silicon nitride layer on the substrate;
performing an STI process, at least one STI region formed within the oxide layer, the silicon nitride layer, and the substrate within each of the memory array and the logic areas;
forming a patterned mask on the silicon nitride layer and the STI region, the mask partially exposing the silicon nitride layer and partially exposing the STI region in the memory array area; and
etching the silicon nitride layer and the STI region in the memory array area not covered by the mask to from a plurality of deep trenches, each deep trench having a vertical sidewall in contact with the STI region, and a curve sidewall not in contact with the STI region.
9. The method of claim 8 wherein the mask comprises a photoresist layer.
10. The method of claim 9 further comprising forming a capacitor bottom electrode, a capacitor dielectric layer, and a capacitor top electrode in each deep trench.
11. The method of claim 10 wherein the capacitor dielectric layer comprises an oxide/nitride/oxide layer.
12. The method of claim 8 wherein the mask comprises a hard mask, a BARC deposited on the hard mask, and a photoresist layer deposited on the BARC.
13. The method of claim 12 wherein the material of the hard mask is selected from the group consisting of dielectric material, silicon dioxide, silicon nitride, silicon-oxy-nitride, phosphorous silicate glass (PSG), boron phosphorous silicate glass (BPSG), silicate, or carbide.