IP Library Granted Patent US 7,494,898
Granted Patent B2
US 7,494,898 · App. 11/641,336 · Granted Feb 24, 2009

Method for manufacturing semiconductor device

Assignee: Shinko Electric Industries Co., Ltd.
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Quick Facts
Patent No.
US 7,494,898
App. No.
11/641,336
Granted
Feb 24, 2009
Kind
B2
Abstract

A disclosed method for manufacturing a semiconductor device having a structure where a semiconductor element is mounted on a first substrate includes the steps of: bonding the first substrate on which the semiconductor element is mounted and a second substrate made of a material different from a material of the first substrate so as to encapsulate the semiconductor element; forming a first groove in the first substrate and a second groove in the second substrate; and cleaving a portion between the first groove and the second groove so as to individualize the semiconductor device.

Claims (19)

1. A method for manufacturing a semiconductor device, the method comprising the steps of:

forming a plurality of concave portions on a front surface of a first substrate;

forming a wiring extending from the inside of the plural concave portions to a rear surface of the first substrate;

mounting a semiconductor element on each of the plural concave portions;

encapsulating the semiconductor element by bonding the front surface of the first substrate to a second substrate made of a material different from a material of the first substrate;

forming a first groove in the first substrate and a second groove in the second substrate; and

individualizing the semiconductor device by cleaving a portion between the first groove and the second groove so as to individualize the semiconductor device;

wherein the individualized semiconductor device includes at least one of the concave portions on which the semiconductor element is mounted.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein

the semiconductor element is made of an optical functional element.

3. The method for manufacturing a semiconductor device according to claim 2 , wherein

the second substrate is made of an optically transparent material.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein

the first substrate and the second substrate are bonded by anodic bonding.

5. The method for manufacturing a semiconductor device according to claim 1 ,

wherein the wiring penetrates the first substrate;

wherein the semiconductor element is connected to the wiring.

6. The method for manufacturing a semiconductor device according to claim 1 , wherein

a periphery of the concave portion of the front surface is bonded to the second substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 19, 2006
From: SUNOHARA, MASAHIRO; TAGUCHI, YUICHI; SHIRAISHI, AKINORI; KOIZUMI, NAOYUKI; MURAYAMA, KEI; SAKAGUCHI, HIDEAKI; HIGASHI, MITSUTOSHI
To: SHINKO ELECTRIC INDUSTRIES CO., LTD.
Reel/Frame 018710/0894 →
Priority Claims (1)
JP 2006-001802 · Jan 6, 2006 · national
Continuity (1)
Related Publication 20070161211A1 · Jul 12, 2007