IP Library Granted Patent US 7,495,257
Granted Patent B2
US 7,495,257 · App. 11/016,971 · Granted Feb 24, 2009

Light emitting device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,495,257
App. No.
11/016,971
Granted
Feb 24, 2009
Kind
B2
Abstract

An object of the present invention is to provide a light emitting device in which variations in an emission spectrum depending on a viewing angle with respect to a side from which luminescence is extracted are decreased. A light emitting device according to the invention has a transistor, an insulating layer covering the transistor and a light emitting element provided in an opening of the insulating layer. The transistor and the light emitting element are electronically connected through a connecting portion. Additionally, the connecting portion is connected to the transistor through a contact hole penetrating the insulating layer. Note that the insulating layer may be a single layer or a multilayer in which a plurality of layers including different substances is laminated.

Claims (117)

1. A light emitting device comprising:

a first insulating layer;

a second insulating layer formed on the first insulating layer;

a transistor formed on the second insulating layer;

a third insulating layer covering the transistor;

a first opening formed in the third insulating layer;

a first electrode covering the first opening and the third insulating layer so as to be in contact with the first insulating layer;

a bank layer covering the third insulating layer and the first electrode, wherein the bank layer has a second opening so as to expose the first electrode;

a light emitting layer formed over the first electrode which is exposed in the second opening; and

a second electrode formed over the light emitting layer.

2. The light emitting device according to claim 1 , wherein the transistor is electrically connected to the first electrode through a connecting portion provided so as to penetrate the third insulating layer.

3. A laptop personal computer having the light emitting device according to claim 1 .

4. A television receiver having the light emitting device according to claim 1 .

5. A light emitting device comprising:

a first insulating layer;

a second insulating layer formed on the first insulating layer;

a transistor formed on the second insulating layer;

a third insulating layer covering the transistor;

a first opening formed in the third insulating layer;

a first electrode covering the first opening and the third insulating layer so as to be in contact with the first insulating layer;

a bank layer covering the third insulating layer and the first electrode, wherein the bank layer has a second opening so as to expose the first electrode;

a light emitting layer formed over the first electrode which is exposed in the second opening; and

a second electrode formed over the light emitting layer,

wherein the bank layer has a shape in which a radius of curvature varies continuously in an edge.

6. The light emitting device according to claim 5 , wherein the transistor is electrically connected to the first electrode through a connecting portion provided so as to penetrate the third insulating layer.

7. A laptop personal computer having the light emitting device according to claim 5 .

8. A television receiver having the light emitting device according to claim 5 .

9. A light emitting device comprising:

a substrate;

a first insulating film formed over the substrate;

a transistor formed over the first insulating film;

a second insulating layer covering the transistor;

a first opening formed in the second insulating layer;

a first electrode covering the first opening and the second insulating layer so as to be in contact with the first insulating layer;

a bank layer covering the second insulating layer and the first electrode, wherein the bank layer has a second opening so as to expose the first electrode;

a light emitting layer formed over the first electrode which is exposed in the second opening; and

a second electrode formed over the light emitting layer,

wherein the first insulating layer prevents the diffusion of impurities and has a refractive index which is smaller than that of the first electrode and a refractive index which is larger than that of the substrate.

10. The light emitting device according to claim 9 , wherein the transistor is electrically connected to the first electrode through a connecting portion provided so as to penetrate the second insulating layer.

11. The light emitting device according to claim 9 , wherein the first electrode includes a conductive substance having light-transmitting properties.

12. A laptop personal computer having the light emitting device according to claim 11 .

13. A television receiver having the light emitting device according to claim 11 .

14. A laptop personal computer having the light emitting device according to claim 9 .

15. A television receiver having the light emitting device according to claim 9 .

16. A light emitting device comprising:

a first insulating layer;

a second insulating layer formed on the first insulating layer;

a transistor formed on the second insulating layer, wherein the transistor includes a channel region between a source region and a drain region, and a gate insulating film between the channel region and a gate electrode;

a third insulating layer covering the transistor;

a first opening formed in the third insulating layer;

a first electrode formed in the first opening so as to be in contact with the first insulating layer;

a bank layer covering the second insulating layer;

a second opening formed in the bank layer;

a light emitting layer being in contact with the first electrode which is exposed in the second opening; and

a second electrode formed over the light emitting layer.

17. The light emitting device according to claim 16 , wherein the transistor is electrically connected to the first electrode through a connecting portion provided so as to penetrate the third insulating layer.

18. The light emitting device according to claim 16 , wherein the first electrode includes a conductive substance having light-transmitting properties.

19. A light emitting device comprising:

a substrate;

a first insulating layer formed on the substrate;

a second insulating layer formed on the first insulating layer;

a transistor formed on the second insulating layer, wherein the transistor includes a channel region between a source region and a drain region, and a gate insulating film between the channel region and a gate electrode;

a third insulating layer covering the transistor;

a first opening formed in the third insulating layer;

a first electrode formed in the first opening so as to be in contact with the first insulating layer;

a bank layer having covering the second insulating layer;

a second opening formed in the bank layer;

a light emitting layer being in contact with the first electrode which is exposed in the second opening; and

a second electrode provided over the light emitting layer.

20. The light emitting device according to claim 19 , wherein the transistor is electrically connected to the first electrode through a connecting portion provided so as to penetrate the third insulating layer.

21. The light emitting device according to claim 19 , wherein the first electrode includes a conductive substance having light transmitting properties.

22. The light emitting device according to claim 19 , wherein the substrate has a smaller refractive index than that of the first insulating layer, and wherein the first insulating layer has a smaller refractive index than that of the first electrode.

23. A laptop personal computer having the light emitting device according to claim 19 .

24. A television receiver having the light emitting device according to claim 19 .

25. A light emitting device comprising:

a substrate;

a first insulating layer formed on the substrate;

a second insulating layer formed on the first insulating layer;

a transistor formed on the second insulating layer, wherein the transistor includes a semiconductor layer including a channel region between a source region and a drain region, and a gate insulating film between the channel region and a gate electrode;

a third insulating layer covering the transistor;

a first opening formed in the third insulating layer;

a first electrode formed in the first opening so as to he in contact with the first insulating layer;

a bank layer covering the second insulating layer;

a second opening formed in the bank layer;

a light emitting layer being in contact with the first electrode exposed in the second opening; and

a second electrode formed over the light emitting layer.

26. The light emitting device according to claim 25 , wherein the first electrode is electrically connected to the semiconductor layer through a connecting portion provided so as to penetrate the third insulating layer.

27. The light emitting device according to claim 25 , wherein the first electrode includes a conductive substance having light transmitting properties.

28. The light emitting device according to claim 25 , wherein the substrate has a smaller refractive index than that of the first insulating layer, and wherein the first insulating layer has a smaller refractive index than that of the first electrode.

29. A laptop personal computer having the light emitting device according to claim 25 .

30. A television receiver having the light emitting device according to claim 25 .

31. A light emitting device comprising:

a substrate;

a first insulating film formed over the substrate;

a transistor formed over the first insulating film;

a second insulating layer covering the transistor;

a first opening formed in the second insulating layer;

a first electrode covering the first opening and the second insulating layer so as to be in contact with the first insulating layer;

a bank layer covering the second insulating layer and the first electrode, wherein the bank layer has a second opening so as to expose the first electrode;

a light emitting layer formed over the first electrode which is exposed in the second opening; and

a second electrode formed over the light emitting layer.

32. The light emitting device according to claim 31 , wherein the transistor is electrically connected to the first electrode through a connecting portion provided so as to penetrate the second insulating layer.

33. The light emitting device according to claim 31 , wherein the first electrode includes a conductive substance having light transmitting properties.

34. The light emitting device according to claim 31 , wherein the substrate has a smaller refractive index than that of the first insulating layer, and wherein the first insulating layer has a smaller refractive index than that of the first electrode.

35. A light emitting device comprising:

a substrate;

a first insulating film formed over the substrate;

a transistor formed over the first insulating film;

a second insulating layer covering the transistor;

a first opening and a second opening formed in the second insulating layer;

a wiring connected to the transistor through the first opening;

a first electrode connected to the wiring, wherein the first electrode is in contact with the first insulating layer in the second opening;

a bank layer covering the second insulating layer and the first electrode, wherein the bank layer has a third opening so as to expose the first electrode;

a light emitting layer formed over the first electrode which is exposed in the third opening; and

a second electrode formed over the light emitting layer.

36. The light emitting device according to claim 35 , wherein the first electrode includes a conductive substance having light transmitting properties.

37. The light emitting device according to claim 35 , wherein the substrate has a smaller refractive index than that of the first insulating layer, and wherein the first insulating layer has a smaller refractive index than that of the first electrode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2004
From: KAWAKAMI, TAKAHIRO; TSUCHIYA, KAORU; NISHI, TAKESHI
To: SEICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 016118/0886 →
Priority Claims (1)
JP 2003-432207 · Dec 26, 2003 · national
Continuity (1)
Related Publication 20050145861A1 · Jul 7, 2005