IP Library › Granted Patent US 7,498,191
Granted Patent B2
US 7,498,191 · App. 11/440,793 · Granted Mar 3, 2009

Semiconductor-on-diamond devices and associated methods

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Quick Facts
Patent No.
US 7,498,191
App. No.
11/440,793
Granted
Mar 3, 2009
Kind
B2
Abstract

Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD substrate may include depositing a base layer onto a lattice-orienting silicon (Si) substrate such that the base layer lattice is substantially oriented by the Si substrate, depositing a semiconductor layer onto the base layer such that the semiconductor layer lattice is substantially oriented with respect to the base layer lattice, and disposing a layer of diamond onto the semiconductor layer. The base layer may include numerous materials, including, without limitation, aluminum phosphide (AlP), boron arsenide (BAs), gallium nitride (GaN), indium nitride (InN), and combinations thereof. Additionally, the method may further include removing the lattice-orienting Si substrate and the base layer from the semiconductor layer. In one aspect, the Si substrate may be of a single crystal orientation.

Claims (50)

1. A method of making a semiconductor-on-diamond substrate, comprising:

depositing a base layer onto a lattice-orienting Si substrate such that the base layer lattice is substantially oriented by the Si substrate, said base layer including a member selected from the group consisting of AlP, BAs, GaN, InN, and combinations thereof;

depositing a semiconductor layer onto the base layer such that the semiconductor layer lattice is substantially oriented with respect to the base layer lattice;

disposing a layer of diamond onto the semiconductor layer;

removing the lattice-orienting Si substrate and the base layer from the semiconductor layers,

wherein the base layer is deposited onto a (100) face of the lattice-orienting Si substrate such that the base layer is deposited as a cubic base layer and the semiconductor layer is deposited onto a (100) face of the cubic base layer such that the semiconductor layer is deposited as a cubic semiconductor layer.

2. The method of claim 1 , wherein the Si substrate is of a single crystal orientation.

3. The method of claim 1 , wherein the semiconductor layer is a layer of GaN.

4. The method of claim 3 , wherein the base layer is InN.

5. The method of claim 4 , wherein depositing the layer of GaN onto the layer of InN further comprises gradually transitioning the layer of InN into the layer of GaN.

6. The method of claim 5 , wherein gradually transitioning the layer of InN into the layer of GaN further comprises:

fixing the concentration of N being deposited; and

varying the deposited concentration of Ga and of In such that a ratio of Ga:In gradually transitions from about 0:1 to about 1:0.

7. The method of claim 1 , wherein the semiconductor layer is a layer of AIN.

8. The method of claim 7 , wherein the base layer is InN.

9. The method of claim 8 , wherein depositing the layer of AIN onto the layer of InN further comprises gradually transitioning the layer of InN into the layer of MN.

10. The method of claim 9 , wherein gradually transitioning the layer of InN into the layer of MN further comprises:

fixing the concentration of N being deposited; and

varying the deposited concentration of In and of Al such that a ratio of In:Al gradually transitions from about 1:0 to about 0:1.

11. The method of claim 1 , wherein disposing the layer of diamond further includes bonding the layer of diamond to the semiconductor layer.

12. The method of claim 1 , further comprising coupling the diamond layer to a support substrate.

13. The method of claim 1 , wherein the semiconductor layer is of a single crystal orientation.

14. A method of making a semiconductor-on-diamond substrate, comprising:

depositing a base layer onto a lattice-orienting Si substrate such that the base layer lattice is substantially oriented by the Si substrate, said base layer including a member selected from the group consisting of AlP, BAs, GaN, InN, and combinations thereof;

depositing a semiconductor layer onto the base layer such that the semiconductor layer lattice is substantially oriented with respect to the base layer lattice;

disposing a layer of diamond onto the semiconductor layer;

removing the lattice-orienting Si substrate and the base layer from the semiconductor layer,

wherein the base layer is InN, and depositing the semiconductor layer further comprises:

depositing a layer of GaN onto the layer of InN such that the GaN layer lattice is substantially oriented with respect to the InN layer lattice; and

depositing a layer of AIN onto the layer of GaN such that the AIN layer lattice is substantially oriented with respect to the GaN layer lattice.

15. The method of claim 14 , wherein depositing the layer of GaN onto the layer of InN further comprises gradually transitioning the layer of InN into the layer of GaN.

16. The method of claim 14 , wherein depositing the layer of AIN onto the layer of GaN further comprises gradually transitioning the layer of GaN into the layer of AIN.

17. The method of claim 16 , wherein gradually transitioning the layer of GaN into the layer of AIN further comprises:

fixing the concentration of N being deposited; and

varying the deposited concentration of Ga and of Al such that a ratio of Ga:Al gradually transitions from about 0:1 to about 1:0.

18. The method of claim 14 , further comprising removing the GaN layer from the AIN layer.

19. A method of making a semiconductor-on-diamond substrate, comprising:

depositing a base layer onto a lattice-orienting Si substrate such that the base layer lattice is substantially oriented by the Si substrate, said base layer including a member selected from the group consisting of AlP, BAs, GaN, InN, and combinations thereof;

depositing a semiconductor layer onto the base layer such that the semiconductor layer lattice is substantially oriented with respect to the base layer lattice;

disposing a layer of diamond onto the semiconductor layer;

removing the lattice-orienting Si substrate and the base layer from the semiconductor layer,

wherein disposing the layer of diamond further includes forming the layer of diamond on the semiconductor layer, and further comprising depositing a conformal carbon coating onto the semiconductor layer prior to forming the layer of diamond.

20. A method of making a semiconductor-on-diamond substrate, comprising:

depositing a base layer onto a lattice-orienting Si substrate such that the base layer lattice is substantially oriented by the Si substrate, said base layer including a member selected from the group consisting of AlP, BAs, GaN, InN, and combinations thereof;

depositing a semiconductor layer onto the base layer such that the semiconductor layer lattice is substantially oriented with respect to the base layer lattice;

disposing a layer of diamond onto the semiconductor layer;

removing the lattice-orienting Si substrate and the base layer from the semiconductor Layer,

wherein depositing the base layer further comprises:

depositing a layer of SiC onto the lattice-orienting Si substrate such that the SiC layer lattice is substantially oriented by the Si substrate; and

depositing the base layer onto SiC layer such that the base layer lattice is substantially oriented with respect to the SiC layer lattice.

Continuity (1)
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