IP Library Granted Patent US 7,502,007
Granted Patent B2
US 7,502,007 · App. 10/916,610 · Granted Mar 10, 2009

Electro-optical device, electronic apparatus, and electro-optical shielding device

Assignee: Seiko Epson Corporation
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Quick Facts
Patent No.
US 7,502,007
App. No.
10/916,610
Granted
Mar 10, 2009
Kind
B2
Abstract

Exemplary embodiments of the present invention provide an electro-optical device having a sampling circuit including a plurality of thin-film transistors corresponding to respective data lines, the thin-film transistors each including i) a drain connected to a drain line extending from the data line, ii) a source connected to a source line extending from an image-signal line in the extending direction of the data line, and iii) a gate interposed between the drain line and the source line; a data-line driving circuit supplying sampling-circuit driving signals to the gate; and an electromagnetic shield disposed in a space between two adjacent thin-film transistors. This reduces the occurrence of image problems due to parasitic capacitance between the thin-film transistors in the sampling circuit.

Claims (48)

1. An electro-optical device, comprising:

a plurality of scanning lines and a plurality of data lines intersecting each other in an image display area;

a plurality of pixels connected to the plurality of scanning lines and the plurality of data lines;

n-number of image-signal lines to which image signals are supplied, n being a number greater than or equal to 2, the image-signal lines being located in a peripheral area that is peripheral to the image display area;

a sampling circuit in the peripheral area, the sampling circuit including thin-film transistors corresponding to the respective data lines, the thin-film transistors including a first group of n thin-film transistors connected to n data lines and a second group of n thin-film transistors connected to a different n data lines, the first group and the second group being located adjacent to each other and separated by a space therebetween, the thin-film transistors each including:

i) a drain connected to a drain line extending from the data line in the extending direction of the data line;

ii) a source connected to a source line extending from the image-signal line in the extending direction of the data line; and

iii) a gate interposed between the drain line and the source line, and extending in the extending direction of the data line;

a data-line driving circuit to supply sampling-circuit driving signals to the gates of the thin-film transistors in the sampling circuit, data-line driving circuit simultaneously driving n data lines at a time by first supplying sampling-circuit driving signals to the gates in the first group and subsequently to the gates of the thin-film transistors in the second group; and

an electromagnetic shield disposed entirely between thin-film transistors of the first group and thin-film transistors of the second group in the sampling circuit, no electromagnetic shield disposed in between any other parts of the thin-film transistors in either the first group or the second group.

2. The electro-optical device according to claim 1 , the source line, the drain line, and the electromagnetic shield being formed of the same conductive layer disposed in a laminated structure on the substrate.

3. The electro-optical device according to claim 1 , the source line and the drain line being formed of the same first conductive layer disposed in a laminated structure on the substrate; and

the electromagnetic shield in the laminated structure having a portion formed of a second conductive layer disposed on the first conductive layer with an insulating interlayer interposed therebetween.

4. The electro-optical device according to claim 3 , the electromagnetic shield at least partially covering the source line and the drain line from above the insulating interlayer.

5. The electro-optical device according to claim 3 , the insulating interlayer being provided with a depression isolated from the source line and the drain line, the second conductive layer also being formed in the depression.

6. The electro-optical device according to claim 1 , the source line and the drain line being formed of the same first conductive layer disposed in a laminated structure on the substrate; and

the electromagnetic shield in the laminated structure having a portion formed of a second conductive layer disposed under the first conductive layer with insulating interlayers interposed therebetween.

7. The electro-optical device according to claim 1 , the electromagnetic shield being connected to lines of constant potential.

8. The electro-optical device according to claim 7 , the lines of constant potential including a line of ground potential supplied to the data-line driving circuit.

9. The electro-optical device according to claim 1 , the electromagnetic shield being connected to lines of variable potential periodically changing in response to timing of inversion driving.

10. The electro-optical device according to claim 1 , the electromagnetic shield being connected to the gate.

11. The electro-optical device according to claim 1 , the electromagnetic shield between the two adjacent thin-film transistors being formed in a position for at least partially blocking the shortest electric line of force connecting the source line to the drain line adjacent to each other.

12. An electronic apparatus, comprising:

an electro-optical device that includes:

a plurality of scanning lines and a plurality of data lines intersecting with each other in an image display area;

a plurality of pixels connected to the plurality of scanning lines and the plurality of data lines;

n-number of image-signal lines to which image signals are supplied, n being a number greater than or equal to 2, the image-signal lines being located in a peripheral area that is peripheral to the image display area;

a sampling circuit in the peripheral area, the sampling circuit including thin-film transistors corresponding to the respective data lines, the thin-film transistors including a first group of n thin-film transistors connected to n data lines and a second group of n thin-film transistors connected to a different n data lines, the first group and the second group being located adjacent to each other and separated by a space therebetween, the thin-film transistors each including:

i) a drain connected to a drain line extending from the data line;

ii) a source connected to a source line extending from the image-signal line in the extending direction of the data line; and

iii) a gate interposed between the drain line and the source line, and extending in the extending direction of the data line;

a data-line driving circuit to supply sampling-circuit driving signals to the gates of the thin-film transistors in the sampling circuit, data-line driving circuit simultaneously driving n data lines at a time by first supplying sampling-circuit driving signals to the gates in the first group and subsequently to the gates of the thin-film transistors in the second group; and

an electromagnetic shield disposed entirely between thin-film transistors of the first group and thin-film transistors of the second group in the sampling circuit, no electromagnetic shield disposed in between any other parts of the thin-film transistors in either the first group or the second group.

13. An electro-optical device, comprising:

a substrate;

a plurality of scanning lines and a plurality of data lines intersecting each other in an image display area on the substrate;

a plurality of pixels connected to the plurality of scanning lines and the plurality of data lines;

a plurality of image-signal lines to which image signals are supplied, the image-signal lines being located in a peripheral area of the image display area on the substrate;

a sampling circuit in the peripheral area, the sampling circuit including a plurality of thin-film transistors corresponding to the respective data lines, the thin-film transistors each including:

i) a drain connected to a drain line extending from the data line in the extending direction of the data line;

ii) a source connected to a source line extending from the image-signal line in the extending direction of the data line; and

iii) a gate interposed between the drain line and the source line, and extending in the extending direction of the data line;

a data-line driving circuit to supply sampling-circuit driving signals to the gate; and

an electromagnetic shield disposed entirely between thin-film transistors of the first group and thin-film transistors of the second group in the sampling circuit, no electromagnetic shield disposed in between any other parts of the thin-film transistors in either the first group or the second group;

the source line and the drain line being formed of the same first conductive layer disposed in a laminated structure on the substrate; and

the electromagnetic shield in the laminated structure having a first portion formed of a second conductive layer disposed on the first conductive layer with an insulating interlayer interposed therebetween and a second portion formed of a conductive material disposed in a convex part of the insulating interlayer.

14. An electro-optical device according to claim 13 , the convex part is a hole that is circular or rectangular in plan view.

15. An electro-optical device according to claim 13 , the convex part is a long slot or groove.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 16, 2018
From: SEIKO EPSON CORPORATION
To: 138 EAST LCD ADVANCEMENTS LIMITED
Reel/Frame 046551/0423 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 13, 2004
From: ISHII, KENYA
To: SEIKO EPSON CORPORATION
Reel/Frame 015451/0606 →
Priority Claims (1)
JP 2003-304587 · Aug 28, 2003 · national
Continuity (1)
Related Publication 20050068310A1 · Mar 31, 2005