Deposition processes for tungsten-containing barrier layers

1. A method for forming a barrier material on a substrate, comprising:

exposing a dielectric layer on a substrate to a plasma during a preclean process, wherein the dielectric layer comprises a feature having sidewalls and a bottom surface;

depositing a tungsten-containing barrier material on the sidewalls and the bottom surface of the feature during a cyclic layer deposition process, wherein the tungsten-containing barrier material comprises tungsten nitride;

depositing a metal-containing seed layer on the tungsten-containing barrier material; and

depositing a metal-containing layer over the metal-containing seed layer to fill the feature.

2. The method of claim 1 , wherein the tungsten-containing barrier material has a thickness of less than about 20 Å.

3. The method of claim 2 , wherein the thickness is about 10 Å.

4. The method of claim 1 , wherein the plasma is formed by a remote plasma system.

5. The method of claim 4 , wherein the preclean process and the cyclic layer deposition process are in the same process chamber.

6. The method of claim 1 , wherein the cyclic layer deposition process is performed within a process chamber comprising:

a chamber lid;

a substrate support; and

an expanding channel centralized above the substrate support and having a bottom surface sized and shaped to substantially cover the substrate.

7. The method of claim 6 , wherein the substrate is sequentially exposed to precursor gases flowing from the expanding channel during the cyclic layer deposition process.

8. The method of claim 7 , wherein the precursor gases comprise a metal-containing precursor and ammonia gas.

9. The method of claim 7 , wherein the precursor gases are exposed to the substrate having a circular flow pattern selected from the group consisting of vortex, helix, spiral, and derivatives thereof.

10. The method of claim 1 , wherein the metal-containing layer is deposited by a chemical vapor deposition process.

11. The method of claim 10 , wherein the metal-containing layer comprises tungsten.

12. The method of claim 1 , wherein the metal-containing seed layer and the metal-containing layer comprise copper.

13. A method for forming a barrier material on a substrate, comprising:

positioning a substrate within a process chamber, the process chamber comprising:

a chamber lid;

a substrate support; and

an expanding channel centralized above the substrate support and having a bottom surface sized and shaped to substantially cover the substrate;

depositing a tungsten-containing barrier material on the substrate during a cyclic layer deposition process, wherein the tungsten-containing barrier material comprises tungsten nitride and the cyclic layer deposition process comprises sequentially exposing the substrate to precursor gases flowing from the expanding channel;

depositing a metal-containing seed layer on the tungsten-containing barrier material; and

depositing a metal-containing layer over the metal-containing seed layer.

14. The method of claim 13 , wherein the tungsten-containing barrier material has a thickness of less than about 20 Å.

15. The method of claim 14 , wherein the thickness is about 10 Å.

16. The method of claim 13 , wherein the precursor gases comprise a metal-containing precursor and ammonia gas.

17. The method of claim 13 , wherein the precursor gases are exposed to the substrate having a circular flow pattern selected from the group consisting of vortex, helix, spiral, and derivatives thereof.

18. The method of claim 17 , wherein the process chamber further comprises a remote plasma system.

19. The method of claim 18 , wherein the substrate is exposed to a plasma during a preclean process prior to depositing the tungsten-containing barrier material.

20. The method of claim 13 , wherein the metal-containing layer is deposited by a chemical vapor deposition process.

21. The method of claim 20 , wherein the metal-containing layer comprises tungsten.

22. A method for forming a barrier material on a substrate, comprising:

depositing a tungsten-containing barrier material on a substrate during a cyclic layer deposition process, wherein the tungsten-containing barrier material comprises tungsten and tungsten nitride;

depositing a metal-containing seed layer on the tungsten-containing barrier material; and

depositing a metal-containing layer over the metal-containing seed layer during a chemical vapor deposition process.

23. The method of claim 22 , wherein the tungsten-containing barrier material has a thickness of less than about 20 Å.

24. The method of claim 23 , wherein the thickness is about 10 Å.

25. The method of claim 22 , wherein the cyclic layer deposition process is performed within a process chamber comprising:

a chamber lid;

a substrate support; and

an expanding channel centralized above the substrate support and having a bottom surface sized and shaped to substantially cover the substrate.

26. The method of claim 25 , wherein the substrate is sequentially exposed to precursor gases flowing from the expanding channel during the cyclic layer deposition process.

27. The method of claim 26 , wherein the precursor gases comprise a metal-containing precursor and ammonia gas.

28. The method of claim 26 , wherein the precursor gases are exposed to the substrate having a circular flow pattern selected from the group consisting of vortex, helix, spiral, and derivatives thereof.

29. The method of claim 25 , wherein the process chamber further comprises a remote plasma system.

30. The method of claim 29 , wherein the substrate is exposed to a plasma during a preclean process prior to depositing the tungsten-containing barrier material.

31. The method of claim 22 , wherein the metal-containing layer comprises tungsten.