Field-effect microelectronic device, capable of forming one or several transistor channels
The invention relates to a field-effect microelectronic device, and the production method thereof. Said device comprises a substrate ( 700 ) and at least one improved structure ( 702 ), capable of forming one or several transistor channels. Said structure, composed of several bars stacked on the substrate, may allow space saving in the integration of field-effect transistors and the performances thereof to be improved.
1. Field-effect microelectronic device, including:
a substrate; and
at least one structure forming one or more channels capable of connecting, in the direction of their lengths, one or more sources and one or more drains, which structure is formed by a stack, in a direction orthogonal to a main plane of the substrate, of at least two bars having different widths thereby producing a notched side profile of the stack, said stack including an alternation of conducting bars and bars that based on an insulating material.
2. Microelectronic device according to claim 1 , the stack including at least two successive bars of which one is based on Si and the other is based on SiO 2 .
3. Microelectronic device according to claim 1 , at least one of the bars being at least partially surrounded with insulating caps, in a direction parallel to a main plane of the substrate.
4. Microelectric device according to claim 1 , said structure including at least two bars having different lengths and/or different thicknesses.
5. Field-effect microelectronic device according to claim 1 , further comprising:
a gate at least partially covering said structure and one or more sources connected by said structure to one or more drains.
6. Device according to claim 1 , wherein the notched side profile is either a serrated profile or a crenellated profile.