Deposition and densification process for titanium nitride barrier layers
In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×10 10 atoms/cm 2 .
1. A method for forming a titanium nitride barrier stack on a substrate, comprising:
depositing a first titanium nitride layer on the substrate by a metal-organic chemical vapor deposition process;
densifying the first titanium nitride layer by exposing the substrate to a plasma process;
depositing a second titanium nitride layer on the first titanium nitride layer by the metal-organic chemical vapor deposition process;
densifying the second titanium nitride layer by exposing the substrate to the plasma process;
depositing a conductive material on the substrate; and
exposing the substrate to an annealing process, wherein the titanium nitride barrier stack has a copper diffusion potential of less than about 5×10 10 atoms/cm 2 .
2. The method of claim 1 , wherein the copper diffusion potential is less than about 1×10 10 atoms/cm 2 .
3. The method of claim 1 , further comprising:
depositing a third titanium nitride layer on the second titanium nitride layer by the metal-organic chemical vapor deposition process; and
densifying the third titanium nitride layer by exposing the substrate to the plasma process.
4. The method of claim 3 , wherein the first titanium nitride layer has a thickness of about 15 Å or less, the second titanium nitride layer has a thickness of about 15 Å or less, and the third titanium nitride layer has a thickness of about 15 Å or less.
5. The method of claim 1 , wherein the substrate is exposed to a plasma gas during the plasma process, the plasma gas comprises hydrogen and a gas selected from the group consisting of nitrogen, argon, helium, neon, and combinations thereof.
6. The method of claim 5 , wherein each of the titanium nitride layers is exposed to the plasma for a time period within a range from about 10 seconds to about 20 seconds and at a plasma power within a range from about 750 watts to about 1,250 watts.
7. The method of claim 1 , wherein the annealing process occurs for a time period within a range from about 30 minutes to about 90 minutes and at a temperature within a range from about 350° C. to about 500° C.
8. The method of claim 1 , wherein the titanium nitride barrier stack is deposited on a metallic titanium layer disposed on the substrate, and the metallic titanium layer is deposited on the substrate by a physical vapor deposition process.
9. The method of claim 8 , wherein the conductive material comprises an element selected from the group consisting of copper, tungsten, aluminum, titanium, tantalum, ruthenium, cobalt, alloys thereof, and combinations thereof.