Direct tailoring of the composition and density of ALD films
A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process. A system comprising a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor comprising a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures formed in a plurality of dielectric layers formed on the substrate and each of the plurality of interconnect structures separated from the plurality of dielectric layers by a barrier layer formed according to an atomic layer deposition process.
1. A method comprising:
introducing an organometallic precursor and a first co-reactant according to a first set of conditions for an atomic layer deposition process in the presence of a substrate;
introducing the organometallic precursor and a second co-reactant according to a different second set of conditions for an atomic layer deposition process in the presence of the substrate;
introducing a plasma source; and
forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process,
wherein a difference between the first set of conditions and the second conditions comprises a variable related to at least one of the first or second co-reactant and the plasma source.
2. The method of claim 1 , wherein a difference between the first set of conditions and the second set of conditions comprises a variable related to the plasma source.
3. The method of claim 2 wherein an energy density of the plasma source according to the second set of conditions is different than an energy density of the plasma source according to the first set of conditions.
4. The method of claim 1 , wherein forming comprises forming a graded film.
5. The method of claim 1 , wherein a difference between the first set of conditions and the second set of conditions comprises a variable related to the co-reactant.
6. The method of claim 5 , wherein the first co-reactant and the second co-reactant are different.
7. The method of claim 1 , wherein forming comprises:
forming a first layer according to the first set of conditions and forming a second layer according to the second set of conditions, wherein the second layer comprises a material property different than a material property of the first layer.
8. A method comprising:
introducing an organometallic precursor according to a first set of conditions for an atomic layer deposition process in the presence of a substrate;
introducing the organometallic precursor according to a different second set of conditions for an atomic layer deposition process in the presence of the substrate; and
forming a barrier layer and an adhesion layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process,
wherein the first set of conditions comprises a first temperature and the second set of conditions comprises a different temperature.