High voltage transistor and method for fabricating the same
A high voltage transistor operating through a high voltage and a method for fabricating the same are provided. The high voltage transistor includes: an insulation layer on a substrate; an N + -type drain junction region on the insulation layer; an N − -type drain junction region on the N + -type drain junction region; a P − -type body region provided in a trench region of the N − -type drain junction region; a plurality of gate patterns including a gate insulation layer and a gate conductive layer in other trench regions bordered by the P − -type body region and the N − -type drain junction region; a plurality of source regions contacted to a source electrode on the P − -type body region; and a plurality of N + -type drain regions contacted to the N − -type drain junction region and individual drain electrodes.
1. A high voltage transistor, comprising:
a single insulation layer on a substrate;
an N + -type drain junction region on the single insulation layer;
an N − -type drain junction region on the N + -type drain junction region;
a P − -type body region provided in a first trench region of the N − -type drain junction region;
a plurality of first gate patterns including a first gate insulation layer and a first gate conductive layer in other trench regions bordered by the P − -type body region and the N − -type drain junction region;
a plurality of first source regions contacted to a first source electrode on the P − -type body region;
a plurality of N + -type drain regions contacted to the N − -type drain junction region and individual drain electrodes;
a P + -type drain junction region formed on the single insulation layer, wherein the P + -type drain junction region is formed to be apart from the N + -type drain junction region;
a P − -type drain junction region formed on the P + -type drain junction region;
an N − -type body region provided in a second trench region inside of the P − -type drain junction region;
a plurality of second gate patterns including a second gate insulation layer and a second gate conductive layer in other trench regions bordered by the N − -type body region and the P − -type drain junction region;
a plurality of second source regions contacted to a second source electrode on the N − -type body region; and
a plurality of P + -type drain regions contacted to the P − -type drain junction region and individual drain electrodes.
2. The high voltage transistor of claim 1 , wherein the plurality of first source regions include a P + -type source contact region contacted to the first source electrode and a plurality of N + -type source regions formed in a manner to surround the P + -type source contact region.
3. The high voltage transistor of claim 1 , wherein the plurality of second source regions include an N + -type source contact region contacted to the second source electrode and a plurality of P + -type source regions formed in a manner to surround the N + -type source contact region.