Solid-state image pickup device and radiation image pickup device suitable for use in a flat panel detector
A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.
1. A solid-state image pickup device comprising a plurality of photoelectric conversion elements and a plurality of switching elements, characterized in that each photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements, wherein a film thickness of the shielding electrode layer is thinner than each of a film thickness of a gate electrode layer, a source electrode layer, a drain electrode layer, and a sensor biasing electrode layer.
2. A solid-state image pickup device according to claim 1 , wherein one photoelectric conversion element and one or more switching elements are disposed in one pixel.
3. A solid-state image pickup device according to claim 1 , wherein each photoelectric conversion element has a photoelectric conversion layer of a MIS type, and the photoelectric conversion layer includes an insulating layer, a semiconductor layer, and a high impurity concentrated semiconductor layer.
4. A solid-state image pickup device according to claim 1 , wherein each photoelectric conversion element has a photoelectric conversion layer, and the photoelectric conversion layer includes a first high impurity concentrated semiconductor layer of one conductivity type, a semiconductor layer, and a second high impurity concentrated semiconductor layer of a conductivity type opposite to the one conductivity type of the first high impurity concentrated semiconductor layer.
5. A solid-state image pickup device according to claim 1 , wherein the shielding electrode layer is not formed above a signal line connected to one of a source electrode and a drain electrode of the switching element.
6. A solid-state image pickup device according to claim 1 , wherein the shielding electrode layer is held at a constant electric potential.
7. A solid-state image pickup device according to claim 6 , wherein the shielding electrode layer is grounded.
8. A solid-state image pickup device according to claim 1 , wherein each of the switching elements is constituted by a TFT, and the shielding electrode layer is disposed so as to cover an upper portion of a channel of each of the TFTs.
9. A solid-state image pickup device according to claim 8 , wherein the shielding electrode layer has a width equal to or smaller than a channel length of the TFT and is disposed so as to cross a TFT driving wiring.
10. A solid-state image pickup device according to claim 1 , wherein the shielding electrode layer is made of a high melting point metal.
11. A solid-state image pickup device according to claim 10 , wherein the shielding electrode layer is made of molybdenum (Mo), chromium (Cr), titanium (Ti), tungsten (W), or molybdenum-tungsten (MoW).
12. A solid-state image pickup device according to claim 1 , wherein the solid-state image pickup device includes a gate electrode layer, a gate insulating layer, a first amorphous semiconductor layer, a first n-type semiconductor layer, a source electrode layer, a drain electrode layer, a source/drain electrode layer, a first interlayer insulating layer, the shielding electrode layer, a second interlayer insulating layer, a sensor lower electrode layer, an insulating layer, a second amorphous semiconductor layer, a second n-type semiconductor layer, a transparent electrode layer, and a sensor biasing electrode layer.
13. A solid-state image pickup device according to claim 12 , wherein one photoelectric conversion element and one or more TFTs are disposed in one pixel.
14. A radiation image pickup device, characterized in that a wavelength conversion unit is disposed above each photoelectric conversion element in the solid-state image pickup device as claimed in claim 1 .
15. A radiation image pickup device according to claim 14 , wherein one photoelectric conversion element and one or more switching elements are disposed in one pixel.
16. A radiation image pickup device comprising a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, characterized in that the radiation conversion layer is formed above one or more switching elements, and a shielding electrode layer is disposed between the switching elements and the radiation conversion layer, wherein a film thickness of the shielding electrode layer is thinner than each of the film thickness of a gate electrode layer, a source electrode layer, a drain electrode layer, and a sensor biasing electrode layer.
17. A radiation image pickup device according to claim 16 , wherein the radiation image pickup device includes a gate electrode layer, a gate insulating layer, a first amorphous semiconductor layer, a first n-type semiconductor layer, a source electrode layer, a drain electrode layer, a first interlayer insulating layer, the shielding electrode layer, a second interlayer insulating layer, a sensor lower electrode layer, a radiation conversion layer, and a sensor biasing electrode layer.