Emission material and organic electroluminescent device using the same
An organic electroluminescent device (OELD) is provided. The OELD includes a substrate, an anode, a cathode, a hole transport layer, an electron transport layer and an emission layer. The anode and the cathode are disposed on the substrate. The hole transport layer is disposed between the anode and the cathode. The electron transport layer is disposed between the hole transport layer and the cathode. The emission layer is disposed between the hole transport layer and the electron transport layer. The emission layer includes a host and a dopant. The chemical structure of the dopant is shown as the formula [I]: “M” is a metal atom whose atomic weight is greater than 40. “S” is selected from a group consisting of alkyl, alkoxy, haloalkyl, halogen, hydrogen and any other substituents.
1. An organic electroluminescent device (OELD), comprising:
a substrate;
an anode and a cathode disposed on the substrate;
a hole transport layer disposed between the anode and the cathode;
an electron transport layer disposed between the hole transport layer and the cathode; and
an emission layer disposed between the hole transport layer and the electron transport layer, wherein the emission layer comprises a host material and a dopant material, and the chemical structure of the dopant material is shown as the formula [I]:
wherein “M” is a metal whose atomic weight is greater than 40, while “S” is selected from the group consisting of alkyl, alkoxy, haloalkyl, halogen, and hydrogen, wherein the concentration of the dopant material in the emission layer ranges from 1 wt % to 20 wt %.
2. The OELD according to claim 1 , wherein “M” is selected from a group consisting of osmium (Os), ruthenium (Ru), iridium (Ir), rhenium (Re), thallium (TI), and rhodium (Rh).
3. The OELD according to claim 1 , wherein “S” is methoxy.
4. The OELD according to claim 1 , wherein the dopant material emits a light whose wavelength ranges from 400 nm to 500 nm.
5. The OELD according to claim 4 , wherein the wavelength of the light is 464 nm.
6. The OELD according to claim 1 , further comprising:
a hole injection layer disposed between the hole transport layer and the anode.
7. The OELD according to claim 1 , further comprising:
an electron injection layer disposed between the electron transport layer and the cathode.
8. The OELD according to claim 1 , further comprising:
a hole blocking layer disposed between the electron transport layer and the emission layer.