Plasma processing apparatus and semiconductor device manufactured by the same apparatus

1. A plasma processing apparatus comprising:

a sealable chamber to be introduced with reactive material gas;

four pairs of cathode-anode bodies arranged in the chamber and configured to form four discharge spaces for performing plasma discharge of the material gas;

two power supplies for plasma discharge, placed outside the chamber;

two matching boxes placed outside the chamber and configured to match impedance between the cathode-anode bodies and the power supplies; and

a power introduction wire extending to each of the cathodes from the power supplies via the matching boxes, wherein

the power supplies are synchronized with each other, and the power introduction wire is branched into two wires between the matching box and the cathodes, and the branched wires are symmetrically extended.

2. The plasma processing apparatus according to claim 1 , wherein the power introduction wire is accommodated in a housing arranged for every branched part between the matching box and the chamber.

3. The plasma processing apparatus according to claim 1 , wherein the power supply operates at a frequency from 1 MHz or more to 60 MHz or less.

4. The plasma processing apparatus according to claim 1 , wherein the power introduction wire comprises at least one of copper, aluminum, nickel, silver, gold, or an alloy primarily composed of these metals.

5. A semiconductor device manufactured by the plasma processing apparatus according to claim 1 .

6. A plasma processing apparatus comprising:

a sealable chamber to be introduced with reactive material gas;

a plurality of pairs of cathode-anode bodies arranged in the chamber and configured to form a plurality of discharge spaces for performing plasma discharge of the material gas;

two power supplies for plasma discharge, placed outside the chamber;

two matching boxes placed outside the chamber and configured to match impedance between the cathode-anode bodies and the power supplies; and

a power introduction wire extending to each of the cathodes from the power supplies via the matching boxes, wherein

the power supplies are synchronized with each other, and the power introduction wire is branched into two wires between the matching box and the cathodes, then each of the branched wires is further branched into two wires, and these branched wires are symmetrically extended.

7. The plasma processing apparatus according to claim 6 , wherein the power introduction wire is accommodated in a housing arranged for every branched part between the matching box and the chamber.

8. The plasma processing apparatus according to claim 6 , wherein the power supply operates at a frequency from 1 MHz or more to 60 MHz or less.

9. The plasma processing apparatus according to claim 6 , wherein the power introduction wire comprises at least one of copper, aluminum, nickel, silver, gold, or an alloy primarily composed of these metals.

10. A semiconductor device manufactured by the plasma processing apparatus according to claim 6 .

11. A plasma processing apparatus comprising:

a sealable chamber to be introduced with reactive material gas;

a plurality of pairs of cathode-anode bodies arranged in the chamber and configured to form a plurality of discharge spaces for performing plasma discharge of the material gas;

a plurality of power supplies for plasma discharge, placed outside the chamber;

a plurality of matching boxes placed outside the chamber and configured to match impedance between the cathode-anode bodies and the power supplies; and

a power introduction wire extending to each of the cathodes from the power supplies via the matching boxes, wherein

the power supplies are synchronized with each other, and the power introduction wire is branched into 2 n (n is an integer of one or more) wires between the matching box and the cathodes, and the branched wires are symmetrically extended.

12. The plasma processing apparatus according to claim 11 , wherein the power introduction wire is accommodated in a housing arranged for every branched part between the matching box and the chamber.

13. The plasma processing apparatus according to claim 11 , wherein the power supply operates at a frequency from 1 MHz or more to 60 MHz or less.

14. The plasma processing apparatus according to claim 11 , wherein the power introduction wire comprises at least one of copper, aluminum, nickel, silver, gold, or an alloy primarily composed of these metals.

15. A semiconductor device manufactured by the plasma processing apparatus according to claim 11 .

16. A plasma processing apparatus comprising:

a sealable chamber to be introduced with reactive material gas;

four pairs of cathode-anode bodies arranged in the chamber and configured to form four discharge spaces for performing plasma discharge of the material gas;

two power supplies for plasma discharge, placed outside the chamber;

a high frequency generator provided between the two power supplies;

two matching boxes placed outside the chamber and configured to match impedance between the cathode-anode bodies and the power supplies; and

a power introduction wire extending to each of the cathodes from each power supply via each matching box, wherein

the power supplies are synchronized with each other, and the power introduction wire between each matching box and the chamber is accommodated in one housing which is arranged between each matching box and the chamber and is branched into two wires in the housing, and the branched wires are symmetrically extended.

17. The plasma processing apparatus according to claim 16 , wherein the power supply operates at a frequency from 1 MHz or more to 60 MHz or less.

18. The plasma processing apparatus according to claim 16 , wherein the power supply operates at a frequency from 1 MHz or more to 60 MHz or less.

19. The plasma processing apparatus according to claim 16 , wherein the power supply operates at a frequency from 1 MHz or more to 60 MHz or less.