Organometallic precursor compounds

1. A method for producing a film, coating or powder by decomposing an organometallic precursor compound represented by the formula (RL)Mo(CO) 2 (NO) wherein L is a substituted cyclopentadienyl ligand and R is an alkyl having from 2 to about 8 carbon atoms or SiMe 3 ; thereby producing the film, coating or powder.

2. The method of claim 1 wherein R is selected from ethyl, propyl, isopropyl, butyl, and tert-butyl.

3. The method of claim 1 wherein the organometallic precursor compound is selected from (EtCp)Mo(CO) 2 (NO), (PrCp)Mo(CO) 2 (NO), (iPrCp)Mo(CO) 2 (NO), (BuCp)Mo(CO) 2 (NO), (tBuCp)Mo(CO) 2 (NO), and the like, wherein Et is ethyl, Pr is propyl, iPr is isopropyl, Bu is butyl and tBu is tert-butyl.

4. The method of claim 1 wherein the decomposing of said organometallic precursor compound is thermal, chemical, photochemical or plasma-activated.

5. The method of claim 1 wherein said organometallic precursor compound is vaporized and the vapor is directed into a deposition reactor housing a substrate.

6. The method of claim 5 wherein said substrate is comprised of a material selected from the group consisting of a metal, a metal silicide, a semiconductor, an insulator and a barrier material.

7. The method of claim 6 wherein said substrate is a patterned wafer.

8. The method of claim 1 wherein said film, coating or powder is produced by a gas phase deposition.

9. A method for producing a film, coating or powder by decomposing an organometallic precursor compound represented by the formula (RL)M(L′) 2 (NO) wherein M is a Group 6 metal, L is a substituted cyclopentadienyl ligand, L′ is the same or different and is a π acceptor ligand, and R is an alkyl having from 2 to about 8 carbon atoms or SiMe 3 ; thereby producing the film, coating or powder.

10. The method of claim 9 wherein R is selected from ethyl, propyl, isopropyl, butyl, and tert-butyl.

11. The method of claim 9 wherein M is selected from molybdenum, chromium or tungsten.

12. The method of claim 9 wherein the organometallic precursor compound is selected from (EtCp)Mo(CO) 2 (NO), (PrCp)Mo(CO) 2 (NO), (iPrCp)Mo(CO) 2 (NO), (BuCp)Mo(CO) 2 (NO), (tBuCp)Mo(CO) 2 (NO), and the like, wherein Et is ethyl, Pr is propyl, iPr is isopropyl, Bu is butyl and tBu is tert-butyl.

13. The method of claim 9 wherein the decomposing of said organometallic precursor compound is thermal, chemical, photochemical or plasma-activated.

14. The method of claim 9 wherein said organometallic precursor compound is vaporized and the vapor is directed into a deposition reactor housing a substrate.

15. The method of claim 14 wherein said substrate is comprised of a material selected from the group consisting of a metal, a metal silicide, a semiconductor, an insulator and a barrier material.

16. The method of claim 15 wherein said substrate is a patterned wafer.

17. The method of claim 9 wherein said film, coating or powder is produced by a gas phase deposition.

18. A method for producing a film, coating or powder by decomposing an organometallic precursor compound represented by the formula (RL)M(CO) 2 (NO) wherein M is a Group 6 metal, L is a substituted cyclopentadienyl ligand and R is an alkyl having from 2 to about 8 carbon atoms or SiMe 3 ; thereby producing the film, coating or powder.

19. The method of claim 18 wherein R is selected from ethyl, propyl, isopropyl, butyl, and tert-butyl.

20. The method of claim 18 wherein M is selected from molybdenum, chromium or tungsten.

21. The method of claim 18 wherein the organometallic precursor compound is selected from (EtCp)Mo(CO) 2 (NO), (PrCp)Mo(CO) 2 (NO), (iPrCp)Mo(CO) 2 (NO), (BuCp)Mo(CO) 2 (NO), (tBuCp)Mo(CO) 2 (NO), and the like, wherein Et is ethyl, Pr is propyl, iPr is isopropyl, Bu is butyl and tBu is tert-butyl.

22. The method of claim 18 wherein the decomposing of said organometallic precursor compound is thermal, chemical, photochemical or plasma-activated.

23. The method of claim 18 wherein said organometallic precursor compound is vaporized and the vapor is directed into a deposition reactor housing a substrate.

24. The method of claim 23 wherein said substrate is comprised of a material selected from the group consisting of a metal, a metal silicide, a semiconductor, an insulator and a barrier material.

25. The method of claim 24 wherein said substrate is a patterned wafer.

26. The method of claim 18 wherein said film, coating or powder is produced by a gas phase deposition.

27. A method for producing a film, coating or powder by decomposing an organometallic precursor compound represented by the formula (L)M(L′) 2 (NO) wherein M is a Group 6 metal, L is a substituted or unsubstituted anionic ligand selected from a diketonate, amide, cyclic amide, alkoxide, halide or imide, and L′ is the same or different and is a π acceptor ligand; thereby producing the film, coating or powder.

28. The method of claim 27 wherein the organometallic precursor compound is represented by the formula (L)M(CO) 2 (NO) wherein M is a Group 6 metal and L is a substituted or unsubstituted anionic ligand selected from a diketonate, amide, cyclic amide, alkoxide, halide or imide.

29. The method of claim 27 wherein M is selected from molybdenum, chromium or tungsten.

30. The method of claim 27 wherein the decomposing of said organometallic precursor compound is thermal, chemical, photochemical or plasma-activated.

31. The method of claim 27 wherein said organometallic precursor compound is vaporized and the vapor is directed into a deposition reactor housing a substrate.

32. The method of claim 31 wherein said substrate is comprised of a material selected from the group consisting of a metal, a metal silicide, a semiconductor, an insulator and a barrier material.

33. The method of claim 32 wherein said substrate is a patterned wafer.

34. The method of claim 27 wherein said film, coating or powder is produced by a gas phase deposition.

35. A method for producing a film, coating or powder by decomposing an organometallic precursor compound represented by the formula (L)Mo(L′) 2 (NO) wherein L is a substituted or unsubstituted anionic ligand selected from a diketonate, amide, cyclic amide, alkoxide, halide or imide, and L′ is the same or different and is a π acceptor ligand; thereby producing the film, coating or powder.

36. The method of claim 35 wherein the organometallic precursor compound is represented by the formula (L)Mo(CO) 2 (NO) wherein L is a substituted or unsubstituted anionic ligand selected from a diketonate, amide, cyclic amide, alkoxide, halide or imide.

37. The method of claim 35 wherein the decomposing of said organometallic precursor compound is thermal, chemical, photochemical or plasma-activated.

38. The method of claim 35 wherein said organometallic precursor compound is vaporized and the vapor is directed into a deposition reactor housing a substrate.

39. The method of claim 38 wherein said substrate is comprised of a material selected from the group consisting of a metal, a metal silicide, a semiconductor, an insulator and a barrier material.

40. The method of claim 39 wherein said substrate is a patterned wafer.

41. The method of claim 35 wherein said film, coating or powder is produced by a gas phase deposition.