Phase-change memory device using Sb-Se metal alloy and method of fabricating the same
View Patent ↗Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide Sb x Se 100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of Sb x Se 100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
1. A phase-change memory device comprising:
a heat-generating electrode layer;
a first insulating layer partially covering the heat-generating electrode layer, exposing a portion of the heat-generating electrode layer, and having a pore therein; and
an antimony (Sb)-selenium (Se) chalcogenide Sb x Se 100-x phase-change material layer contacting the portion of the heat-generating electrode layer exposed through the pore, and filling the pore.
2. The phase-change memory device of claim 1 , wherein the width of the pore is less than 500 nm.
3. The phase-change memory device of claim 1 , wherein the content (x) of antimony (Sb) in the Sb x Se 100-x phase-change material layer is in the range of 40 to 70.
4. The phase-change memory device of claim 1 , wherein the melting point of the Sb x Se 100-x phase-change material layer is in the range of 540 to 570° C.
5. The phase-change memory device of claim 1 , wherein the melting point of the Sb x Se 100-x phase-change material layer is 50 to 80° C. lower than the melting point of a Ge 2 Sb 2 Te 5 phase-change material layer.
6. The phase-change memory device of claim 1 , wherein a time required for crystallization of the Sb x Se 100-x phase-change material layer is decreased as the content (x) of antimony is increased.
7. The phase-change memory device of claim 1 , wherein the crystallization temperature of the Sb x Se 100-x phase-change material layer is at least higher than 122° C.
8. A method of fabricating a phase-change memory device, the method comprising:
preparing a substrate;
forming a heat-generating electrode layer on the substrate;
forming a first insulating layer that partially covers the heat-generating electrode layer, exposes a portion of one side of the heat-generating electrode layer, and has a pore therein; and
forming an antimony (Sb)-selenium (Se) chalcogenide Sb x Se 100-x phase-change material layer that contacts the portion of the h electrode layer exposed through the pore and fills the pore.
9. The method of claim 8 , wherein the content (x) of antimony (Sb) in the Sb x Se 100-x phase-change material layer is in the range of 40 to 70.
10. The method of claim 8 , wherein the Sb x Se 100-x phase-change material layer is formed by dry etching so as to remain only in a phase-change portion around the pore.
11. The method of claim 10 , wherein a pressure of a chamber for etching the Sb x Se 100-x phase-change material layer is in the range of 3 to 5 mTorr.
12. The method of claim 10 , wherein an etch gas for etching the Sb x Se 100-x phase-change material layer is a mixture of argon (Ar) and chlorine (Cl 2 ).
13. The method of claim 8 , further comprising forming a second insulating layer covering the phase-change material layer after forming the Sb x Se 100-x phase-change material layer.
14. The method of claim 13 , wherein the second insulating layer is formed using electron cyclotron resonance (ECR) plasma chemical vapor deposition.
15. The method of claim 13 , wherein the second insulating layer is formed at room temperature.