Non-volatile memory devices suitable for LCD driver applications

1. A non-volatile memory device, comprising:

an EEPROM transistor in a first portion of a semiconductor substrate, said EEPROM transistor comprising a control gate electrode;

an access transistor in a second portion of the semiconductor substrate that extends adjacent a first side of the first portion of the semiconductor substrate, said access transistor having a first source/drain terminal electrically connected to a first source/drain terminal of said EEPROM transistor and an active region that forms a first P-N junction in the second portion of the semiconductor substrate; and

an erase transistor in a third portion of the semiconductor substrate that extends adjacent a second side of the first portion of the semiconductor substrate, said erase transistor having a first source/drain terminal electrically connected to a second source/drain terminal of said access transistor and an active region that forms a second P-N junction in the third portion of the semiconductor substrate;

wherein the first portion of the semiconductor substrate extends between the first and second P-N junctions; and

wherein the second and third portions of the semiconductor substrate extend on diametrically opposite sides of the control gate electrode.

2. The device of claim 1 , wherein the first and second sides of the first portion of the semiconductor substrate are opposite sides of the first portion of the semiconductor substrate.

3. The device of claim 2 , wherein the first portion of the semiconductor substrate comprises a device isolating layer extending adjacent a surface of the semiconductor substrate; and wherein said EEPROM transistor comprises a tunnel insulating layer on the device isolating layer, a floating gate electrode on the tunnel insulating layer, and an inter-gate insulating layer on the floating gate electrode.

4. The device of claim 3 , wherein the second portion of the semiconductor substrate comprises a first semiconductor well region of first conductivity type and a pocket well region of second conductivity type in said first semiconductor well region; and wherein said access transistor comprises a first gate insulating layer on a portion of the pocket well region and an access gate electrode on the first gate insulating layer, said access gate electrode electrically connected to the floating gate electrode.

5. The device of claim 4 , wherein the second portion of the semiconductor substrate further comprises first and second body contacts on the first semiconductor well region of first conductivity type and the pocket well region of second conductivity type, respectively.

6. The device of claim 3 , wherein the third portion of the semiconductor substrate comprises a second semiconductor well region of first conductivity type; and wherein said erase transistor comprises a second gate insulating layer on a portion of the second semiconductor well region and an erase gate electrode on the second gate insulating layer, said erase gate electrode electrically connected to the floating gate electrode.

7. The device of claim 4 , wherein the third portion of the semiconductor substrate comprises a second semiconductor well region of first conductivity type; and wherein said erase transistor comprises a second gate insulating layer on a portion of the second semiconductor well region and an erase gate electrode on the second gate insulating layer, said erase gate electrode electrically connected to the floating gate electrode.

8. The device of claim 7 , wherein said access gate electrode extends from a first side of the floating gate electrode and said erase gate electrode extends from a second side of the floating gate electrode; and wherein the first and second sides of the floating gate electrode are opposite sides of the floating gate electrode.